Substrate-Tuned Boson Localization in Superfluid 4He Films

G. A. Csáthy, J. D. Reppy, M. H.W. Chan

Research output: Contribution to journalArticle

30 Scopus citations

Abstract

The substrate-tuned boson localization and the phase boundary properties of the adsorbed superfluid 4He films were analyzed. The torsional oscillator technique was used to study the superfluid response of the 4He films. The phase boundary in the temperature-coverage plane had a universal shape. It was found that the inert coverage did not scale with the Van der Waals constant, but showed monotonic dependence on the well depth of the 4He-substrate potential and the 4He substrate binding energy.

Original languageEnglish (US)
Pages (from-to)2353011-2353014
Number of pages4
JournalPhysical Review Letters
Volume91
Issue number23
StatePublished - Dec 5 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Substrate-Tuned Boson Localization in Superfluid <sup>4</sup>He Films'. Together they form a unique fingerprint.

  • Cite this

    Csáthy, G. A., Reppy, J. D., & Chan, M. H. W. (2003). Substrate-Tuned Boson Localization in Superfluid 4He Films. Physical Review Letters, 91(23), 2353011-2353014.