Substrates for the next generation electronics and photonics

Jerzy Ruzyllo

Research output: Contribution to journalShort survey

1 Citation (Scopus)

Abstract

Substrates play a significant role for electronic and photonic devices and systems that have developed into a dominant global industry. The ever present need in this industry to improve device performance and reduce cost, calls for the continued modifications of silicon substrate wafers and III-IV compound semiconductor manufacturing technologies. The use of silicon-on-insulator (SOI) substrates with strain introduced in the active silicon layer can help achieve improved circuit performance without geometry scaling and management of heat dissipated during circuit operation much easily than in the case of bulk substrates. The III-IV semiconductors distinguish themselves from silicon by generally higher electron mobility, while from photonic applications standpoint by featuring predominantly a direct bandgap. As a result of these differences, the III-IV devices feature different designs and different manufacturing needs than their Si counterparts.

Original languageEnglish (US)
Number of pages1
JournalElectrochemical Society Interface
Volume15
Issue number4
StatePublished - Dec 1 2006

Fingerprint

Silicon
Photonics
Electronic equipment
Substrates
Semiconductor materials
Photonic devices
Networks (circuits)
Electron mobility
Industry
Energy gap
Geometry
Costs

All Science Journal Classification (ASJC) codes

  • Electrochemistry

Cite this

@article{022dce02eaaa45b3bfd39324b2f7dc23,
title = "Substrates for the next generation electronics and photonics",
abstract = "Substrates play a significant role for electronic and photonic devices and systems that have developed into a dominant global industry. The ever present need in this industry to improve device performance and reduce cost, calls for the continued modifications of silicon substrate wafers and III-IV compound semiconductor manufacturing technologies. The use of silicon-on-insulator (SOI) substrates with strain introduced in the active silicon layer can help achieve improved circuit performance without geometry scaling and management of heat dissipated during circuit operation much easily than in the case of bulk substrates. The III-IV semiconductors distinguish themselves from silicon by generally higher electron mobility, while from photonic applications standpoint by featuring predominantly a direct bandgap. As a result of these differences, the III-IV devices feature different designs and different manufacturing needs than their Si counterparts.",
author = "Jerzy Ruzyllo",
year = "2006",
month = "12",
day = "1",
language = "English (US)",
volume = "15",
journal = "Electrochemical Society Interface",
issn = "1064-8208",
publisher = "Electrochemical Society, Inc.",
number = "4",

}

Substrates for the next generation electronics and photonics. / Ruzyllo, Jerzy.

In: Electrochemical Society Interface, Vol. 15, No. 4, 01.12.2006.

Research output: Contribution to journalShort survey

TY - JOUR

T1 - Substrates for the next generation electronics and photonics

AU - Ruzyllo, Jerzy

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Substrates play a significant role for electronic and photonic devices and systems that have developed into a dominant global industry. The ever present need in this industry to improve device performance and reduce cost, calls for the continued modifications of silicon substrate wafers and III-IV compound semiconductor manufacturing technologies. The use of silicon-on-insulator (SOI) substrates with strain introduced in the active silicon layer can help achieve improved circuit performance without geometry scaling and management of heat dissipated during circuit operation much easily than in the case of bulk substrates. The III-IV semiconductors distinguish themselves from silicon by generally higher electron mobility, while from photonic applications standpoint by featuring predominantly a direct bandgap. As a result of these differences, the III-IV devices feature different designs and different manufacturing needs than their Si counterparts.

AB - Substrates play a significant role for electronic and photonic devices and systems that have developed into a dominant global industry. The ever present need in this industry to improve device performance and reduce cost, calls for the continued modifications of silicon substrate wafers and III-IV compound semiconductor manufacturing technologies. The use of silicon-on-insulator (SOI) substrates with strain introduced in the active silicon layer can help achieve improved circuit performance without geometry scaling and management of heat dissipated during circuit operation much easily than in the case of bulk substrates. The III-IV semiconductors distinguish themselves from silicon by generally higher electron mobility, while from photonic applications standpoint by featuring predominantly a direct bandgap. As a result of these differences, the III-IV devices feature different designs and different manufacturing needs than their Si counterparts.

UR - http://www.scopus.com/inward/record.url?scp=33846867475&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846867475&partnerID=8YFLogxK

M3 - Short survey

AN - SCOPUS:33846867475

VL - 15

JO - Electrochemical Society Interface

JF - Electrochemical Society Interface

SN - 1064-8208

IS - 4

ER -