Sulfur passivation for shallow Pd/W/Au ohmic contacts to p-InGaSb

S. H. Wang, S. E. Mohney, J. A. Robinson, B. R. Bennett

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Abstract

The relationship between the specific contact resistance of nonalloyed Pd/W/Au ohmic contacts to p-In 0.25Ga 0.75Sb and premetallization surface preparations is examined. The resistance of ohmic contacts is minimized when p-InGaSb is exposed briefly to a dilute (NH 4) 2S solution. This treatment minimizes the thickness of any residual oxide or sulfide layer on the semiconductor and avoids excessive etching of the semiconductor, which would make the contact less shallow. A specific contact resistance of 5.9 × 10 -7 Ω cm 2 is achieved for a Pd/W/Au (2/50/145 nm) contact that consumes no more than 5 nm of InGaSb.

Original languageEnglish (US)
Pages (from-to)3471-3473
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number16
DOIs
StatePublished - Oct 18 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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