Supercapacity (>1000 μf/cm2) charge release in a CVD-grown WSe2 FET incorporating a PEO: CsCIO4 side gate

M. Asghari Heidarlou, B. Jariwala, P. Paletti, S. Rouvimov, J. A. Robinsorr, S. K. Fullerton-Shirey, A. Seabaugh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Engineering & Materials Science