Superconducting MgB2 thin films on silicon carbide substrates by hybrid physical-chemical vapor deposition

X. H. Zeng, A. V. Pogrebnyakov, M. H. Zhu, J. E. Jones, X. X. Xi, S. Y. Xu, E. Wertz, Q. Li, J. M. Redwing, J. Lettieri, V. Vaithyanathan, D. G. Schlom, Zi Kui Liu, O. Trithaveesak, J. Schubert

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Abstract

The growth of MgB2 thin films by hybrid physical-chemical vapor deposition (HPCVD) was discussed. 4H-SiC and 6H-SiC, the polytypes of silicon carbide single crystals, were used as the substrates for the purpose. The chemical stability of SiC against the reactions with Mg, B, Mg-B compounds under HPCVD deposition conditions was shown by thermodynamic calculations. SiC was found as the most suitable substrate for MgB2 thin films.

Original languageEnglish (US)
Pages (from-to)2097-2099
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number13
DOIs
StatePublished - Mar 31 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Zeng, X. H., Pogrebnyakov, A. V., Zhu, M. H., Jones, J. E., Xi, X. X., Xu, S. Y., Wertz, E., Li, Q., Redwing, J. M., Lettieri, J., Vaithyanathan, V., Schlom, D. G., Liu, Z. K., Trithaveesak, O., & Schubert, J. (2003). Superconducting MgB2 thin films on silicon carbide substrates by hybrid physical-chemical vapor deposition. Applied Physics Letters, 82(13), 2097-2099. https://doi.org/10.1063/1.1563840