Superconductivity and Field Effect Transistors

A. W. Kleinsasser, Thomas Nelson Jackson

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A gate-controlled semiconductor-coupled proximity effect weak link acts as a superconducting field effect transistor (FET). In this paper we present a semi-quantitative analysis of the static electrical properties of such a device, comparing theory and available experimental measurements. We emphasize that the critical current-resistance product, an important figure of merit for potential applications, is often significantly larger than that expected from theory. We offer an explanation for this discrepancy and describe experiments in progress to test it. Our analysis can be used to discuss the feasibility, advantages, and disadvantages of these devices, both for scientific investigations and for applications, allowing comparison of the potential of superconducting FETs with more familiar normal FETs.

Original languageEnglish (US)
Pages (from-to)1545-1546
Number of pages2
JournalJapanese Journal of Applied Physics
Volume26
Issue numberS3-2
DOIs
StatePublished - Jan 1 1987

Fingerprint

Field effect transistors
Superconductivity
superconductivity
field effect transistors
Critical currents
figure of merit
quantitative analysis
critical current
Electric properties
electrical properties
Semiconductor materials
products
Chemical analysis
Experiments

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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Superconductivity and Field Effect Transistors. / Kleinsasser, A. W.; Jackson, Thomas Nelson.

In: Japanese Journal of Applied Physics, Vol. 26, No. S3-2, 01.01.1987, p. 1545-1546.

Research output: Contribution to journalArticle

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