Suppression of acceptor deactivation in silicon by argon-ion implantation damage

S Ashok, K. Srikanth

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Permeation of atomic hydrogen in Si damaged with Ar implantation has been studied. Ar was implanted at two distinct doses so as to straggle the amorphization threshold, and atomic hydrogen was subsequently introduced by low-energy ion implantation. The deactivation of dopant boron atoms by atomic hydrogen is drastically reduced in silicon wafers subjected to low-energy argon-ion implantation. Trapping of hydrogen in defect sites generated by argon implant and possibly the formation of molecular hydrogen in the implanted region hinders hydrogen permeation into the Si bulk.

Original languageEnglish (US)
Pages (from-to)1491-1494
Number of pages4
JournalJournal of Applied Physics
Volume66
Issue number3
DOIs
StatePublished - Dec 1 1989

Fingerprint

deactivation
ion implantation
argon
retarding
damage
silicon
hydrogen
implantation
boron
trapping
wafers
dosage
thresholds
energy
defects
atoms

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Ashok, S ; Srikanth, K. / Suppression of acceptor deactivation in silicon by argon-ion implantation damage. In: Journal of Applied Physics. 1989 ; Vol. 66, No. 3. pp. 1491-1494.
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Suppression of acceptor deactivation in silicon by argon-ion implantation damage. / Ashok, S; Srikanth, K.

In: Journal of Applied Physics, Vol. 66, No. 3, 01.12.1989, p. 1491-1494.

Research output: Contribution to journalArticle

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AU - Srikanth, K.

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