Suppression of conductance fluctuation in weakly disordered mesoscopic graphene samples near the charge neutral point

Neal E. Staley, Conor P. Puls, Ying Liu

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

We measured the conductance fluctuation of bilayer and trilayer graphene devices, which were prepared on mechanically exfoliated graphene by an all-dry, lithography-free process by using an ultrathin quartz filament as a shadow mask. Reproducible fluctuations in conductance as a function of applied gate voltage or magnetic field were found. As the gate voltage was tuned so that the graphene device was pushed to the charge neutral point, the amplitude of the conductance fluctuation was found to be quickly suppressed from a value that is consistent with universal conductance fluctuation when the devices were still well within the weakly disordered regime. The possible physical origins of the suppression are discussed.

Original languageEnglish (US)
Article number155429
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume77
Issue number15
DOIs
StatePublished - Apr 18 2008

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Graphene
graphene
retarding
Quartz
Electric potential
Lithography
Masks
Magnetic fields
electric potential
filaments
masks
lithography
quartz
Graphene devices
magnetic fields

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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Suppression of conductance fluctuation in weakly disordered mesoscopic graphene samples near the charge neutral point. / Staley, Neal E.; Puls, Conor P.; Liu, Ying.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 77, No. 15, 155429, 18.04.2008.

Research output: Contribution to journalArticle

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