Suppression of dark current through barrier engineer for solution-processed colloidal quantum-dots infrared photodetectors

Zhenyu Jiang, Wenjia Hu, Yan Liu, Wenjun Zhang, Chen Mo, Guanjun You, Li Wang, Mahmoud R.M. Atalla, Yu Zhang, Jie Liu, Kandhar K. Kurhade, Jian Xu

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In an attempt to suppress the dark current, the barrier layer engineer for solution-processed PbSe colloidal quantum-dot (CQD) photodetectors has been investigated in the present study. It was found that the dark current can be significantly suppressed by implementing two types of carrier blocking layers, namely, hole blocking layer and electron blocking layer, sandwiched in between two active PbSe CQD layers. Meanwhile no adverse impact has been observed for the photo current. Our study suggests that this improvement resides on the transport pathway created via carrier recombination at intermediate layer, which provides wide implications for the suppression of dark current for infrared photodetectors.

Original languageEnglish (US)
Article number091115
JournalApplied Physics Letters
Volume107
Issue number9
DOIs
StatePublished - Aug 25 2015

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dark current
engineers
photometers
quantum dots
retarding
barrier layers
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Jiang, Zhenyu ; Hu, Wenjia ; Liu, Yan ; Zhang, Wenjun ; Mo, Chen ; You, Guanjun ; Wang, Li ; Atalla, Mahmoud R.M. ; Zhang, Yu ; Liu, Jie ; Kurhade, Kandhar K. ; Xu, Jian. / Suppression of dark current through barrier engineer for solution-processed colloidal quantum-dots infrared photodetectors. In: Applied Physics Letters. 2015 ; Vol. 107, No. 9.
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abstract = "In an attempt to suppress the dark current, the barrier layer engineer for solution-processed PbSe colloidal quantum-dot (CQD) photodetectors has been investigated in the present study. It was found that the dark current can be significantly suppressed by implementing two types of carrier blocking layers, namely, hole blocking layer and electron blocking layer, sandwiched in between two active PbSe CQD layers. Meanwhile no adverse impact has been observed for the photo current. Our study suggests that this improvement resides on the transport pathway created via carrier recombination at intermediate layer, which provides wide implications for the suppression of dark current for infrared photodetectors.",
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Jiang, Z, Hu, W, Liu, Y, Zhang, W, Mo, C, You, G, Wang, L, Atalla, MRM, Zhang, Y, Liu, J, Kurhade, KK & Xu, J 2015, 'Suppression of dark current through barrier engineer for solution-processed colloidal quantum-dots infrared photodetectors', Applied Physics Letters, vol. 107, no. 9, 091115. https://doi.org/10.1063/1.4930158

Suppression of dark current through barrier engineer for solution-processed colloidal quantum-dots infrared photodetectors. / Jiang, Zhenyu; Hu, Wenjia; Liu, Yan; Zhang, Wenjun; Mo, Chen; You, Guanjun; Wang, Li; Atalla, Mahmoud R.M.; Zhang, Yu; Liu, Jie; Kurhade, Kandhar K.; Xu, Jian.

In: Applied Physics Letters, Vol. 107, No. 9, 091115, 25.08.2015.

Research output: Contribution to journalArticle

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AU - Jiang, Zhenyu

AU - Hu, Wenjia

AU - Liu, Yan

AU - Zhang, Wenjun

AU - Mo, Chen

AU - You, Guanjun

AU - Wang, Li

AU - Atalla, Mahmoud R.M.

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AU - Kurhade, Kandhar K.

AU - Xu, Jian

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