SURFACE CURRENT FLOW IN ULTRA-THIN SiO2-Si STRUCTURES.

Jerzy Ruzyllo, A. Jakubowski, A. Swit

Research output: Contribution to conferencePaper

1 Scopus citations

Abstract

Report on the study of the mechanism of dc surface current flow between two electrodes formed on the surface of ultra-thin ( less than 50 Angstrom) SiO//2 layer thermally grown on Si substrate. This mechanism is found to be dependent upon the applied voltage range, and the density of mobile ions localized on the oxide surface. The experiments can furnish valuable information on the condition of outer surface of ultra-thin SiO//2 layer providing appropriate interpretation of the obtained I-V characteristics.

Original languageEnglish (US)
Pages583-586
Number of pages4
StatePublished - Jan 1 1977
EventProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl - Vienna, Austria
Duration: Sep 12 1977Sep 16 1977

Other

OtherProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl
CityVienna, Austria
Period9/12/779/16/77

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Ruzyllo, J., Jakubowski, A., & Swit, A. (1977). SURFACE CURRENT FLOW IN ULTRA-THIN SiO2-Si STRUCTURES.. 583-586. Paper presented at Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl, Vienna, Austria, .