Surface dopant concentration monitoring using noncontact surface charge profiling

P. Roman, J. Staffa, S. Fakhouri, M. Brubaker, Jerzy Ruzyllo, K. Torek, E. Kamieniecki

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

This study is concerned with variations of the concentration of active boron dopant in the near surface region of silicon wafers. Boron can be deactivated by pairing with hydrogen or metals, particularly Cu and Fe, all of which may originate from the surface polishing process. The temperature dependence of boron activation is studied using the surface charge profiling method. Based on the determined activation energy of 1.28 eV it was concluded that in the p-type wafers used in this study initially observed boron deactivation was dominated by its interaction with hydrogen introduced during wafer polishing.

Original languageEnglish (US)
Pages (from-to)2297-2300
Number of pages4
JournalJournal of Applied Physics
Volume83
Issue number4
DOIs
StatePublished - Feb 15 1998

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Surface dopant concentration monitoring using noncontact surface charge profiling'. Together they form a unique fingerprint.

  • Cite this

    Roman, P., Staffa, J., Fakhouri, S., Brubaker, M., Ruzyllo, J., Torek, K., & Kamieniecki, E. (1998). Surface dopant concentration monitoring using noncontact surface charge profiling. Journal of Applied Physics, 83(4), 2297-2300. https://doi.org/10.1063/1.366972