TY - JOUR
T1 - Surface-imaged silicon polymers for 193-nm excimer laser lithography
AU - Kunz, Roderick R.
AU - Horn, Mark W.
AU - Goodman, Russell W.
PY - 1992/12
Y1 - 1992/12
N2 - A negative-tone surface-imaged resist process based upon the area-selective oxidation of silicon-backbone polymers, is described. A bromine-based plasma is the resist developer, where the oxidized polymer inhibits the bromine-initiated etching to yield a negative-tone image. Using either polysilanes or polysilynes, resist sensitivities in the range of 50 mJ/cm2 have been obtained and resolutions to 0.2 μm achieved. Photosensitizers can be added to further accelerate the photoxidation, resulting in sensitivities less than 20 mJ/cm2. The latent image formation is reciprocal with respect to fluence in the range 0.05 to 1.5 mJ/cm2 per pulse and with respect to repetition rate. The photooxidation contrast is one, whereas the bromine-based etch step can have a contrast as high as 5. In addition, the exposure, focus, and development latitudes have all been characterized and compared to other surface-imaged 193-nm resist systems. When high-ion-density plasma sources are used, throughput levels appropriate for single-wafer processing can be achieved.
AB - A negative-tone surface-imaged resist process based upon the area-selective oxidation of silicon-backbone polymers, is described. A bromine-based plasma is the resist developer, where the oxidized polymer inhibits the bromine-initiated etching to yield a negative-tone image. Using either polysilanes or polysilynes, resist sensitivities in the range of 50 mJ/cm2 have been obtained and resolutions to 0.2 μm achieved. Photosensitizers can be added to further accelerate the photoxidation, resulting in sensitivities less than 20 mJ/cm2. The latent image formation is reciprocal with respect to fluence in the range 0.05 to 1.5 mJ/cm2 per pulse and with respect to repetition rate. The photooxidation contrast is one, whereas the bromine-based etch step can have a contrast as high as 5. In addition, the exposure, focus, and development latitudes have all been characterized and compared to other surface-imaged 193-nm resist systems. When high-ion-density plasma sources are used, throughput levels appropriate for single-wafer processing can be achieved.
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U2 - 10.1143/JJAP.31.4327
DO - 10.1143/JJAP.31.4327
M3 - Article
AN - SCOPUS:0026962522
VL - 31
SP - 4327
EP - 4331
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12 S
ER -