Surface-imaged silicon polymers for 193-nm excimer laser lithography

Roderick R. Kunz, Mark W. Horn, Russell W. Goodman

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Abstract

A negative-tone surface-imaged resist process based upon the area-selective oxidation of silicon-backbone polymers, is described. A bromine-based plasma is the resist developer, where the oxidized polymer inhibits the bromine-initiated etching to yield a negative-tone image. Using either polysilanes or polysilynes, resist sensitivities in the range of 50 mJ/cm2 have been obtained and resolutions to 0.2 μm achieved. Photosensitizers can be added to further accelerate the photoxidation, resulting in sensitivities less than 20 mJ/cm2. The latent image formation is reciprocal with respect to fluence in the range 0.05 to 1.5 mJ/cm2 per pulse and with respect to repetition rate. The photooxidation contrast is one, whereas the bromine-based etch step can have a contrast as high as 5. In addition, the exposure, focus, and development latitudes have all been characterized and compared to other surface-imaged 193-nm resist systems. When high-ion-density plasma sources are used, throughput levels appropriate for single-wafer processing can be achieved.

Original languageEnglish (US)
Pages (from-to)4327-4331
Number of pages5
JournalJapanese Journal of Applied Physics
Volume31
Issue number12 S
DOIs
StatePublished - Dec 1992

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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