Surface-imaged silicon polymers for 193-nm excimer laser lithography

Roderick R. Kunz, Mark W. Horn, R. B. Goodman, Patricia A. Bianconi, David A. Smith, J. R. Eshelman, Gregory M. Wallraff, Robert D. Miller, Eric J. Ginsburg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations

Abstract

A negative-tone surface-imaged resist process based upon the area-selective oxidation of silicon-backbone polymers is described. A bromine-based plasma is the resist developer, where the oxidized polymer inhibits the bromine-initiated etching to yield a negative-tone image. Using either polysilanes or polysilynes, resist sensitivities in the range of 50 mJ/cm2 have been obtained and resolutions to 0.2 μm achieved. Photosensitizers can be added to further accelerate the photo-oxidation, resulting in sensitivities less than 20 mJ/cm2. The latent image formation is reciprocal with respect to fluence in the range 0.05 to 1.5 mJ/cm2 per pulse and with respect to repetition rate. The photo-oxidation contrast is one, whereas the bromine-based etch step can have a contrast as high as 5. In addition, the exposure, focus, and development latitudes have all been characterized and compared to other surface-imaged 193 nm resist systems.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages385-393
Number of pages9
ISBN (Print)0819408271, 9780819408273
DOIs
StatePublished - Jan 1 1992
EventAdvances in Resist Technology and Processing IX - San Jose, CA, USA
Duration: Mar 9 1992Mar 10 1992

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1672
ISSN (Print)0277-786X

Other

OtherAdvances in Resist Technology and Processing IX
CitySan Jose, CA, USA
Period3/9/923/10/92

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Kunz, R. R., Horn, M. W., Goodman, R. B., Bianconi, P. A., Smith, D. A., Eshelman, J. R., Wallraff, G. M., Miller, R. D., & Ginsburg, E. J. (1992). Surface-imaged silicon polymers for 193-nm excimer laser lithography. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 385-393). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1672). Publ by Int Soc for Optical Engineering. https://doi.org/10.1117/12.59738