Surface passivation studies on GaAs with octadecyl thiol

O. S. Nakagawa, S. Ashok, C. Wade Sheen, Jan Martensson, David L. Allara

Research output: Contribution to conferencePaperpeer-review

4 Scopus citations

Abstract

Passivation of a chemically etched GaAs surface with a self-assembling monolayer of octadecyl thiol was studied through the electrical characteristics of a Schottky diode. Enhanced Schottky barrier height was obtained with a Au contact without sacrificing Schottky diode characteristics. The structure of an octadecyl thiol passivation layer was also investigated by ellipsometry, infrared spectroscopy, contact angle measurement, and x-ray photoemission spectroscopy, and an attempt was made to correlate it with the Schottky diode characteristics.

Original languageEnglish (US)
Pages290-292
Number of pages3
StatePublished - Jan 1 1991
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: Aug 27 1991Aug 29 1991

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period8/27/918/29/91

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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