In this experiment the effect of selected process conditions on the roughness of silicon carbide surfaces was investigated. Both wet and dry surface conditioning steps were implemented to alter surface roughness of bare and epitaxial 4H SiC. It was determined that aggressive wet cleaning procedures increase surface roughness while the same process using dilute chemistries reduces surface roughness. Also, a remote plasma H 2N 2 exposure results in the reduction of surface roughness. Surface roughness was found to have a limited impact on the characteristics of SiC Schottky diodes. On the other hand a dependence of electrical integrity of gate oxides on SiC surface roughness was observed. Overall, SiC surfaces have been shown to display sensitivity to the chemical cleaning environment at least as pronounced as silicon.
|Original language||English (US)|
|Number of pages||6|
|State||Published - Dec 1 2005|
|Event||9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States|
Duration: Oct 16 2005 → Oct 21 2005
All Science Journal Classification (ASJC) codes