Surface sol-gel synthesis of ultrathin semiconductor films

Nina Ivanivna Kovtyukhova, Eugenia V. Buzaneva, Chad C. Waraksa, Benjamin R. Martin, Thomas E. Mallouk

Research output: Contribution to journalArticle

66 Citations (Scopus)

Abstract

Ultrathin films of ZnS, Mn-doped ZnS, ZnO, and SiO2 were grown on silicon substrates using surface sol-gel reactions, and the film growth process was characterized by ellipsometry, atomic force microscopy, X-ray photoelectron spectroscopy, UV-visible absorbance, and photoluminescence (PL) spectroscopy. The Si substrates were pretreated by chemical oxidation, or by derivatization with 4-((dimethylmethoxy)silyl)butylamine. On the oxidized Si/SiO(x) surface, nanoparticulate films of ZnS and Mn-doped ZnS were grown by sequential immersion in aqueous metal acetate and sodium sulfide solutions. During the first four adsorption cycles, there was little film growth, but thereafter the amount of material deposited was linear with the number of adsorption cycles. This behavior is consistent with the formation of ZnS nuclei at low coverage, followed by particle growth in subsequent cycles. PL spectra are consistent with incorporation of Mn2+ into the ZnS nanoparticles. In contrast, the growth of SiO2 films from nonaqueous SiCl4 on the same Si/SiO(x) substrates was regular from the first adsorption cycle, indicating a high density of nucleation sites. On amine-derivatized substrates, ZnO thin films grew as relatively smooth islands, suggesting that the interaction of Zn2+ ions or primary ZnO clusters with the amine surface priming layer was sufficiently strong to prevent the formation of isotropic nanoparticles upon exposure to aqueous base.

Original languageEnglish (US)
Pages (from-to)383-389
Number of pages7
JournalChemistry of Materials
Volume12
Issue number2
DOIs
StatePublished - Feb 1 2000

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Sol-gels
Semiconductor materials
Film growth
Substrates
Adsorption
Amines
Butylamines
Nanoparticles
Photoluminescence spectroscopy
Ultrathin films
Ellipsometry
Silicon
Atomic force microscopy
Photoluminescence
Nucleation
X ray photoelectron spectroscopy
Metals
Sodium
Ions
Thin films

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Kovtyukhova, N. I., Buzaneva, E. V., Waraksa, C. C., Martin, B. R., & Mallouk, T. E. (2000). Surface sol-gel synthesis of ultrathin semiconductor films. Chemistry of Materials, 12(2), 383-389. https://doi.org/10.1021/cm990395p
Kovtyukhova, Nina Ivanivna ; Buzaneva, Eugenia V. ; Waraksa, Chad C. ; Martin, Benjamin R. ; Mallouk, Thomas E. / Surface sol-gel synthesis of ultrathin semiconductor films. In: Chemistry of Materials. 2000 ; Vol. 12, No. 2. pp. 383-389.
@article{f3df2fee2bff4dabbdf25b087fd84dd6,
title = "Surface sol-gel synthesis of ultrathin semiconductor films",
abstract = "Ultrathin films of ZnS, Mn-doped ZnS, ZnO, and SiO2 were grown on silicon substrates using surface sol-gel reactions, and the film growth process was characterized by ellipsometry, atomic force microscopy, X-ray photoelectron spectroscopy, UV-visible absorbance, and photoluminescence (PL) spectroscopy. The Si substrates were pretreated by chemical oxidation, or by derivatization with 4-((dimethylmethoxy)silyl)butylamine. On the oxidized Si/SiO(x) surface, nanoparticulate films of ZnS and Mn-doped ZnS were grown by sequential immersion in aqueous metal acetate and sodium sulfide solutions. During the first four adsorption cycles, there was little film growth, but thereafter the amount of material deposited was linear with the number of adsorption cycles. This behavior is consistent with the formation of ZnS nuclei at low coverage, followed by particle growth in subsequent cycles. PL spectra are consistent with incorporation of Mn2+ into the ZnS nanoparticles. In contrast, the growth of SiO2 films from nonaqueous SiCl4 on the same Si/SiO(x) substrates was regular from the first adsorption cycle, indicating a high density of nucleation sites. On amine-derivatized substrates, ZnO thin films grew as relatively smooth islands, suggesting that the interaction of Zn2+ ions or primary ZnO clusters with the amine surface priming layer was sufficiently strong to prevent the formation of isotropic nanoparticles upon exposure to aqueous base.",
author = "Kovtyukhova, {Nina Ivanivna} and Buzaneva, {Eugenia V.} and Waraksa, {Chad C.} and Martin, {Benjamin R.} and Mallouk, {Thomas E.}",
year = "2000",
month = "2",
day = "1",
doi = "10.1021/cm990395p",
language = "English (US)",
volume = "12",
pages = "383--389",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
number = "2",

}

Kovtyukhova, NI, Buzaneva, EV, Waraksa, CC, Martin, BR & Mallouk, TE 2000, 'Surface sol-gel synthesis of ultrathin semiconductor films', Chemistry of Materials, vol. 12, no. 2, pp. 383-389. https://doi.org/10.1021/cm990395p

Surface sol-gel synthesis of ultrathin semiconductor films. / Kovtyukhova, Nina Ivanivna; Buzaneva, Eugenia V.; Waraksa, Chad C.; Martin, Benjamin R.; Mallouk, Thomas E.

In: Chemistry of Materials, Vol. 12, No. 2, 01.02.2000, p. 383-389.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Surface sol-gel synthesis of ultrathin semiconductor films

AU - Kovtyukhova, Nina Ivanivna

AU - Buzaneva, Eugenia V.

AU - Waraksa, Chad C.

AU - Martin, Benjamin R.

AU - Mallouk, Thomas E.

PY - 2000/2/1

Y1 - 2000/2/1

N2 - Ultrathin films of ZnS, Mn-doped ZnS, ZnO, and SiO2 were grown on silicon substrates using surface sol-gel reactions, and the film growth process was characterized by ellipsometry, atomic force microscopy, X-ray photoelectron spectroscopy, UV-visible absorbance, and photoluminescence (PL) spectroscopy. The Si substrates were pretreated by chemical oxidation, or by derivatization with 4-((dimethylmethoxy)silyl)butylamine. On the oxidized Si/SiO(x) surface, nanoparticulate films of ZnS and Mn-doped ZnS were grown by sequential immersion in aqueous metal acetate and sodium sulfide solutions. During the first four adsorption cycles, there was little film growth, but thereafter the amount of material deposited was linear with the number of adsorption cycles. This behavior is consistent with the formation of ZnS nuclei at low coverage, followed by particle growth in subsequent cycles. PL spectra are consistent with incorporation of Mn2+ into the ZnS nanoparticles. In contrast, the growth of SiO2 films from nonaqueous SiCl4 on the same Si/SiO(x) substrates was regular from the first adsorption cycle, indicating a high density of nucleation sites. On amine-derivatized substrates, ZnO thin films grew as relatively smooth islands, suggesting that the interaction of Zn2+ ions or primary ZnO clusters with the amine surface priming layer was sufficiently strong to prevent the formation of isotropic nanoparticles upon exposure to aqueous base.

AB - Ultrathin films of ZnS, Mn-doped ZnS, ZnO, and SiO2 were grown on silicon substrates using surface sol-gel reactions, and the film growth process was characterized by ellipsometry, atomic force microscopy, X-ray photoelectron spectroscopy, UV-visible absorbance, and photoluminescence (PL) spectroscopy. The Si substrates were pretreated by chemical oxidation, or by derivatization with 4-((dimethylmethoxy)silyl)butylamine. On the oxidized Si/SiO(x) surface, nanoparticulate films of ZnS and Mn-doped ZnS were grown by sequential immersion in aqueous metal acetate and sodium sulfide solutions. During the first four adsorption cycles, there was little film growth, but thereafter the amount of material deposited was linear with the number of adsorption cycles. This behavior is consistent with the formation of ZnS nuclei at low coverage, followed by particle growth in subsequent cycles. PL spectra are consistent with incorporation of Mn2+ into the ZnS nanoparticles. In contrast, the growth of SiO2 films from nonaqueous SiCl4 on the same Si/SiO(x) substrates was regular from the first adsorption cycle, indicating a high density of nucleation sites. On amine-derivatized substrates, ZnO thin films grew as relatively smooth islands, suggesting that the interaction of Zn2+ ions or primary ZnO clusters with the amine surface priming layer was sufficiently strong to prevent the formation of isotropic nanoparticles upon exposure to aqueous base.

UR - http://www.scopus.com/inward/record.url?scp=0033798619&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033798619&partnerID=8YFLogxK

U2 - 10.1021/cm990395p

DO - 10.1021/cm990395p

M3 - Article

AN - SCOPUS:0033798619

VL - 12

SP - 383

EP - 389

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 2

ER -

Kovtyukhova NI, Buzaneva EV, Waraksa CC, Martin BR, Mallouk TE. Surface sol-gel synthesis of ultrathin semiconductor films. Chemistry of Materials. 2000 Feb 1;12(2):383-389. https://doi.org/10.1021/cm990395p