Surface stress modification in silicon carbide by laser ablation

Ronald L. Jacobsen, Joseph Randi, Sarah Bertke

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the use of short pulse laser ablation as a technique for mitigation of subsurface stress and damage in SiC. Conventional machining, grinding or polishing of SiC renders a damaged surface layer of depth approximately equal to the final peak-to-valley roughness. This damage layer is comprised of compressive stress and represents a threat to the integrity of the material as sites for crack initiation. However, observations of the Twyman Effect of disk shaped samples suggest that laser ablation can remove the stress layer and substantially mitigate subsurface damage. Data are presented in support of this claim, along with comments on technique and applications.

Original languageEnglish (US)
Title of host publicationICALEO 2009 - 28th International Congress on Applications of Lasers and Electro-Optics, Congress Proceedings
Pages1224-1227
Number of pages4
StatePublished - Dec 1 2009
Event28th International Congress on Applications of Lasers and Electro-Optics, ICALEO 2009 - Orlando, FL, United States
Duration: Nov 2 2009Nov 5 2009

Publication series

NameICALEO 2009 - 28th International Congress on Applications of Lasers and Electro-Optics, Congress Proceedings
Volume102

Other

Other28th International Congress on Applications of Lasers and Electro-Optics, ICALEO 2009
CountryUnited States
CityOrlando, FL
Period11/2/0911/5/09

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Jacobsen, R. L., Randi, J., & Bertke, S. (2009). Surface stress modification in silicon carbide by laser ablation. In ICALEO 2009 - 28th International Congress on Applications of Lasers and Electro-Optics, Congress Proceedings (pp. 1224-1227). (ICALEO 2009 - 28th International Congress on Applications of Lasers and Electro-Optics, Congress Proceedings; Vol. 102).