Surfactant assisted growth of MgO films on GaN

E. A. Paisley, T. C. Shelton, S. Mita, R. Collazo, H. M. Christen, Z. Sitar, M. D. Biegalski, J. P. Maria

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Abstract

Thin epitaxial films of 111 oriented MgO on [0001]-oriented GaN were grown by molecular beam epitaxy and pulsed laser deposition using the assistance of a vapor phase surfactant. In both cases, surfactant incorporation enabled layer-by-layer growth and a smooth terminal surface by stabilizing the {111} rocksalt facet. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100× reduction in leakage current density for the surfactant-assisted samples. These data verify numerous predictions regarding the role of H-termination in regulating the habit of rocksalt crystals.

Original languageEnglish (US)
Article number092904
JournalApplied Physics Letters
Volume101
Issue number9
DOIs
StatePublished - Aug 27 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Paisley, E. A., Shelton, T. C., Mita, S., Collazo, R., Christen, H. M., Sitar, Z., Biegalski, M. D., & Maria, J. P. (2012). Surfactant assisted growth of MgO films on GaN. Applied Physics Letters, 101(9), [092904]. https://doi.org/10.1063/1.4748886