Symmetry-Controlled Electron-Phonon Interactions in van der Waals Heterostructures

Chen Chen, Xiaolong Chen, Hongyi Yu, Yuchuan Shao, Qiushi Guo, Bingchen Deng, Sungmin Lee, Chao Ma, Kenji Watanabe, Takashi Taniguchi, Je Geun Park, Shengxi Huang, Wang Yao, Fengnian Xia

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Light-matter interactions in the van der Waals (vdWs) heterostructures exhibit many fascinating properties which can be harnessed to realize optoelectronic applications and probe fundamental physics. Moreover, the electron-phonon interaction in the vdWs heterostructures can have a profound impact on light-matter interaction properties because light excited electrons can strongly couple with phonons in heterostructures. Here, we report symmetry-controlled electron-phonon interactions in engineered two-dimensional (2D) material/silicon dioxide (SiO 2 ) vdWs heterostructures. We observe two Raman modes arising from originally Raman-silent phonon modes in SiO 2 . The Raman modes have fixed peak positions regardless of the type of 2D materials in the heterostructures. Interestingly, such Raman emissions exhibit various symmetry properties in heterostructures with 2D materials of different crystalline structures, controlled by their intrinsic electronic band properties. In particular, we reveal chiral Raman emissions with reversed helicity in contrast to that of typical valley polarization in honeycomb 2D materials due to the phonon-assisted excitonic intervalley scattering process induced by electron-hole exchange interaction. The observation of the symmetry-controlled Raman scattering process not only provides a deep insight into the microscopic mechanisms of electron-phonon interactions in vdWs heterostructures but also may lead to the realization of valley-phononic devices.

Original languageEnglish (US)
Pages (from-to)552-559
Number of pages8
JournalACS nano
Volume13
Issue number1
DOIs
StatePublished - Jan 22 2019

Fingerprint

Electron-phonon interactions
electron phonon interactions
Heterojunctions
symmetry
valleys
interactions
phonons
Raman spectra
silicon dioxide
Electrons
Exchange interactions
physics
Phonons
probes
Silicon Dioxide
Optoelectronic devices
polarization
Raman scattering
scattering
electronics

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Chen, C., Chen, X., Yu, H., Shao, Y., Guo, Q., Deng, B., ... Xia, F. (2019). Symmetry-Controlled Electron-Phonon Interactions in van der Waals Heterostructures. ACS nano, 13(1), 552-559. https://doi.org/10.1021/acsnano.8b07290
Chen, Chen ; Chen, Xiaolong ; Yu, Hongyi ; Shao, Yuchuan ; Guo, Qiushi ; Deng, Bingchen ; Lee, Sungmin ; Ma, Chao ; Watanabe, Kenji ; Taniguchi, Takashi ; Park, Je Geun ; Huang, Shengxi ; Yao, Wang ; Xia, Fengnian. / Symmetry-Controlled Electron-Phonon Interactions in van der Waals Heterostructures. In: ACS nano. 2019 ; Vol. 13, No. 1. pp. 552-559.
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abstract = "Light-matter interactions in the van der Waals (vdWs) heterostructures exhibit many fascinating properties which can be harnessed to realize optoelectronic applications and probe fundamental physics. Moreover, the electron-phonon interaction in the vdWs heterostructures can have a profound impact on light-matter interaction properties because light excited electrons can strongly couple with phonons in heterostructures. Here, we report symmetry-controlled electron-phonon interactions in engineered two-dimensional (2D) material/silicon dioxide (SiO 2 ) vdWs heterostructures. We observe two Raman modes arising from originally Raman-silent phonon modes in SiO 2 . The Raman modes have fixed peak positions regardless of the type of 2D materials in the heterostructures. Interestingly, such Raman emissions exhibit various symmetry properties in heterostructures with 2D materials of different crystalline structures, controlled by their intrinsic electronic band properties. In particular, we reveal chiral Raman emissions with reversed helicity in contrast to that of typical valley polarization in honeycomb 2D materials due to the phonon-assisted excitonic intervalley scattering process induced by electron-hole exchange interaction. The observation of the symmetry-controlled Raman scattering process not only provides a deep insight into the microscopic mechanisms of electron-phonon interactions in vdWs heterostructures but also may lead to the realization of valley-phononic devices.",
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Chen, C, Chen, X, Yu, H, Shao, Y, Guo, Q, Deng, B, Lee, S, Ma, C, Watanabe, K, Taniguchi, T, Park, JG, Huang, S, Yao, W & Xia, F 2019, 'Symmetry-Controlled Electron-Phonon Interactions in van der Waals Heterostructures', ACS nano, vol. 13, no. 1, pp. 552-559. https://doi.org/10.1021/acsnano.8b07290

Symmetry-Controlled Electron-Phonon Interactions in van der Waals Heterostructures. / Chen, Chen; Chen, Xiaolong; Yu, Hongyi; Shao, Yuchuan; Guo, Qiushi; Deng, Bingchen; Lee, Sungmin; Ma, Chao; Watanabe, Kenji; Taniguchi, Takashi; Park, Je Geun; Huang, Shengxi; Yao, Wang; Xia, Fengnian.

In: ACS nano, Vol. 13, No. 1, 22.01.2019, p. 552-559.

Research output: Contribution to journalArticle

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T1 - Symmetry-Controlled Electron-Phonon Interactions in van der Waals Heterostructures

AU - Chen, Chen

AU - Chen, Xiaolong

AU - Yu, Hongyi

AU - Shao, Yuchuan

AU - Guo, Qiushi

AU - Deng, Bingchen

AU - Lee, Sungmin

AU - Ma, Chao

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Park, Je Geun

AU - Huang, Shengxi

AU - Yao, Wang

AU - Xia, Fengnian

PY - 2019/1/22

Y1 - 2019/1/22

N2 - Light-matter interactions in the van der Waals (vdWs) heterostructures exhibit many fascinating properties which can be harnessed to realize optoelectronic applications and probe fundamental physics. Moreover, the electron-phonon interaction in the vdWs heterostructures can have a profound impact on light-matter interaction properties because light excited electrons can strongly couple with phonons in heterostructures. Here, we report symmetry-controlled electron-phonon interactions in engineered two-dimensional (2D) material/silicon dioxide (SiO 2 ) vdWs heterostructures. We observe two Raman modes arising from originally Raman-silent phonon modes in SiO 2 . The Raman modes have fixed peak positions regardless of the type of 2D materials in the heterostructures. Interestingly, such Raman emissions exhibit various symmetry properties in heterostructures with 2D materials of different crystalline structures, controlled by their intrinsic electronic band properties. In particular, we reveal chiral Raman emissions with reversed helicity in contrast to that of typical valley polarization in honeycomb 2D materials due to the phonon-assisted excitonic intervalley scattering process induced by electron-hole exchange interaction. The observation of the symmetry-controlled Raman scattering process not only provides a deep insight into the microscopic mechanisms of electron-phonon interactions in vdWs heterostructures but also may lead to the realization of valley-phononic devices.

AB - Light-matter interactions in the van der Waals (vdWs) heterostructures exhibit many fascinating properties which can be harnessed to realize optoelectronic applications and probe fundamental physics. Moreover, the electron-phonon interaction in the vdWs heterostructures can have a profound impact on light-matter interaction properties because light excited electrons can strongly couple with phonons in heterostructures. Here, we report symmetry-controlled electron-phonon interactions in engineered two-dimensional (2D) material/silicon dioxide (SiO 2 ) vdWs heterostructures. We observe two Raman modes arising from originally Raman-silent phonon modes in SiO 2 . The Raman modes have fixed peak positions regardless of the type of 2D materials in the heterostructures. Interestingly, such Raman emissions exhibit various symmetry properties in heterostructures with 2D materials of different crystalline structures, controlled by their intrinsic electronic band properties. In particular, we reveal chiral Raman emissions with reversed helicity in contrast to that of typical valley polarization in honeycomb 2D materials due to the phonon-assisted excitonic intervalley scattering process induced by electron-hole exchange interaction. The observation of the symmetry-controlled Raman scattering process not only provides a deep insight into the microscopic mechanisms of electron-phonon interactions in vdWs heterostructures but also may lead to the realization of valley-phononic devices.

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