Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth

Y. C. Chen, X. Y. Zhong, A. R. Konicek, D. S. Grierson, N. H. Tai, I. N. Lin, B. Kabius, J. M. Hiller, A. V. Sumant, R. W. Carpick, O. Auciello

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Abstract

This letter describes the fundamental process underlying the synthesis of ultrananocrystalline diamond (UNCD) films, using a new low-pressure, heat-assisted bias-enhanced nucleation (BEN)/bias enhanced growth (BEG) technique, involving H2 C H4 gas chemistry. This growth process yields UNCD films similar to those produced by the Ar-rich/ C H4 chemistries, with pure diamond nanograins (3-5 nm), but smoother surfaces (∼6 nm rms) and higher growth rate (∼1 μmh). Synchrotron-based x-Ray absorption spectroscopy, atomic force microscopy, and transmission electron microscopy studies on the BEN-BEG UNCD films provided information critical to understanding the nucleation and growth mechanisms, and growth condition-nanostructure-property relationships.

Original languageEnglish (US)
Article number133113
JournalApplied Physics Letters
Volume92
Issue number13
DOIs
StatePublished - 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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