Synthesis, characterization, and dielectric properties of β-Gd 2(MoO4)3 thin films prepared by chemical solution deposition

Song Won Ko, Devin A. Mourey, Trevor Clark, Susan Trolier-Mckinstry

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2 Scopus citations


A chemical solution was employed for deposition of gadolinium molybdate [β-Gd2(MoO4)3] thin films. Gadolinium acetylacetonate hydrate {[CH3COCH = C(O-)CH3] 3Gd•xH2O}, molybdenum isopropoxide {Mo[OCH(CH 3)2]5}, and acetylacetone were used in synthesis of this molybdate. Thermal gravimetry and differential scanning calorimetry suggested that crystallization of β-Gd2(MoO 4)3 occurs at around 480 °C. Phase-pure, orthorhombic β-Gd2(MoO4)3 films were deposited on Pt/Ti/SiO2/Si(100) substrates. β-Gd2(MoO 4)3 films crystallized at 750 °C showed a strong (00l) preferred orientation. The film dielectric constant measured was 10~14 and the dielectric loss was less than 3%. There was no marked signature in the permittivity at the bulk Curie temperature, approximately 159 °C.

Original languageEnglish (US)
Pages (from-to)269-275
Number of pages7
JournalJournal of Sol-Gel Science and Technology
Issue number3
StatePublished - Jun 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Materials Chemistry

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