Synthesis, lattice structure, and band gap of ZnSnN2

Paul C. Quayle, Keliang He, Jie Shan, Kathleen Kash

Research output: Contribution to journalArticle

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Abstract

We report the synthesis of a direct gap semiconductor, ZnSnN2, by a plasma-assisted vapor-liquid-solid technique. Powder X-ray diffraction measurements of polycrystalline material yielded lattice parameters in good agreement with predicted values. Photoluminescence efficiency at room temperature was observed to be independent of excitation intensity between 103 and 108 W/cm2. The band gap was measured by photoluminescence excitation spectroscopy to be 1.7 ± 0.1 eV. The range of direct band gaps for the Zn(Si,Ge,Sn)N2 alloys is now predicted to extend from 4.5 to 1.7 eV, opening up this little-studied family of materials to a host of important applications.

Original languageEnglish (US)
Pages (from-to)135-138
Number of pages4
JournalMRS Communications
Volume3
Issue number3
DOIs
StatePublished - Jan 1 2013

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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    Quayle, P. C., He, K., Shan, J., & Kash, K. (2013). Synthesis, lattice structure, and band gap of ZnSnN2. MRS Communications, 3(3), 135-138. https://doi.org/10.1557/mrc.2013.19