Synthesis of polycrystalline ytterbium monoxide thin films by molecular beam deposition

Mark D. Losego, Jon Paul Maria

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The synthesis of ytterbium monoxide (YbO) by molecular beam deposition (MBD) is investigated for developing a lattice-matched oxide to gallium nitride. Because Yb 2O 3 is the thermodynamically stable oxide at atmospheric pressure, YbO has previously only been prepared by high-pressure bulk synthesis reactions. This article demonstrates that through low growth temperature and the kinetic control of molecular fluxes allowed by MBD, the polycrystalline monoxide phase can be stabilized in thin film form on silicon substrates. Once deposited, the YbO rocksalt, structure is found to be stable at room temperature and atmospheric pressure. Elemental analysis indicates that films are primarily composed of Yb and O. Elemental concentrations of H, C, and N, which are known to form phases with Yb of similar structure and lattice parameter to YbO, are shown to be below the 1 at. % level.

Original languageEnglish (US)
Pages (from-to)2111-2114
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number4
DOIs
StatePublished - Jul 1 2006

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Ytterbium
Molecular beams
ytterbium
molecular beams
Thin films
synthesis
thin films
Atmospheric pressure
atmospheric pressure
Gallium nitride
Oxides
oxides
gallium nitrides
Growth temperature
Lattice constants
lattice parameters
Fluxes
Silicon
Kinetics
kinetics

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "The synthesis of ytterbium monoxide (YbO) by molecular beam deposition (MBD) is investigated for developing a lattice-matched oxide to gallium nitride. Because Yb 2O 3 is the thermodynamically stable oxide at atmospheric pressure, YbO has previously only been prepared by high-pressure bulk synthesis reactions. This article demonstrates that through low growth temperature and the kinetic control of molecular fluxes allowed by MBD, the polycrystalline monoxide phase can be stabilized in thin film form on silicon substrates. Once deposited, the YbO rocksalt, structure is found to be stable at room temperature and atmospheric pressure. Elemental analysis indicates that films are primarily composed of Yb and O. Elemental concentrations of H, C, and N, which are known to form phases with Yb of similar structure and lattice parameter to YbO, are shown to be below the 1 at. {\%} level.",
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