Synthesis of thin carbon films on 4H-SiC by low temperature extraction of Si with HCl

Mark Andrew Fanton, Joshua Alexander Robinson, M. Hollander, B. E. Weiland, K. Trumbull, M. Labella

Research output: Contribution to journalLetter

2 Citations (Scopus)

Abstract

Carbon films as thin as 5 nm were synthesized by graphitization of 4H-SiC substrates at 1200-1350 °C, in a dilute HCl/Ar atmosphere at a pressure of 0.8 bar. These films formed at significantly lower temperatures and higher pressures than conventional synthesis of epitaxial graphene by sublimation of Si. Graphitization rates of 0.08-1.40 nm/min were observed. The activation energy for graphitization was approximately 460 kJ/mol. Raman spectroscopy indicated that the material was highly disordered with D-peak to G-peak ratios ranging from 0.70 to 1.43, compared to high quality graphene which does not exhibit the disorder induced D-peak.

Original languageEnglish (US)
Pages (from-to)2671-2673
Number of pages3
JournalCarbon
Volume48
Issue number9
DOIs
StatePublished - Jan 1 2010

Fingerprint

Graphitization
Carbon films
Graphite
Thin films
Graphene
Sublimation
Temperature
Raman spectroscopy
Activation energy
Substrates

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

Fanton, Mark Andrew ; Robinson, Joshua Alexander ; Hollander, M. ; Weiland, B. E. ; Trumbull, K. ; Labella, M. / Synthesis of thin carbon films on 4H-SiC by low temperature extraction of Si with HCl. In: Carbon. 2010 ; Vol. 48, No. 9. pp. 2671-2673.
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Synthesis of thin carbon films on 4H-SiC by low temperature extraction of Si with HCl. / Fanton, Mark Andrew; Robinson, Joshua Alexander; Hollander, M.; Weiland, B. E.; Trumbull, K.; Labella, M.

In: Carbon, Vol. 48, No. 9, 01.01.2010, p. 2671-2673.

Research output: Contribution to journalLetter

TY - JOUR

T1 - Synthesis of thin carbon films on 4H-SiC by low temperature extraction of Si with HCl

AU - Fanton, Mark Andrew

AU - Robinson, Joshua Alexander

AU - Hollander, M.

AU - Weiland, B. E.

AU - Trumbull, K.

AU - Labella, M.

PY - 2010/1/1

Y1 - 2010/1/1

N2 - Carbon films as thin as 5 nm were synthesized by graphitization of 4H-SiC substrates at 1200-1350 °C, in a dilute HCl/Ar atmosphere at a pressure of 0.8 bar. These films formed at significantly lower temperatures and higher pressures than conventional synthesis of epitaxial graphene by sublimation of Si. Graphitization rates of 0.08-1.40 nm/min were observed. The activation energy for graphitization was approximately 460 kJ/mol. Raman spectroscopy indicated that the material was highly disordered with D-peak to G-peak ratios ranging from 0.70 to 1.43, compared to high quality graphene which does not exhibit the disorder induced D-peak.

AB - Carbon films as thin as 5 nm were synthesized by graphitization of 4H-SiC substrates at 1200-1350 °C, in a dilute HCl/Ar atmosphere at a pressure of 0.8 bar. These films formed at significantly lower temperatures and higher pressures than conventional synthesis of epitaxial graphene by sublimation of Si. Graphitization rates of 0.08-1.40 nm/min were observed. The activation energy for graphitization was approximately 460 kJ/mol. Raman spectroscopy indicated that the material was highly disordered with D-peak to G-peak ratios ranging from 0.70 to 1.43, compared to high quality graphene which does not exhibit the disorder induced D-peak.

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DO - 10.1016/j.carbon.2010.03.072

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VL - 48

SP - 2671

EP - 2673

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