Synthesis science of SrRuO3 and CaRuO3 epitaxial films with high residual resistivity ratios

Hari P. Nair, Yang Liu, Jacob P. Ruf, Nathaniel J. Schreiber, Shun Li Shang, David J. Baek, Berit H. Goodge, Lena F. Kourkoutis, Zi Kui Liu, Kyle M. Shen, Darrell G. Schlom

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Abstract

Epitaxial SrRuO3 and CaRuO3 films were grown under an excess flux of elemental ruthenium in an adsorption-controlled regime by molecular-beam epitaxy (MBE), where the excess volatile RuOx (x = 2 or 3) desorbs from the growth front leaving behind a single-phase film. By growing in this regime, we were able to achieve SrRuO3 and CaRuO3 films with residual resistivity ratios (ρ300 K4 K) of 76 and 75, respectively. A combined phase stability diagram based on the thermodynamics of MBE (TOMBE) growth, termed a TOMBE diagram, is employed to provide improved guidance for the growth of complex materials by MBE.

Original languageEnglish (US)
Article number046101
JournalAPL Materials
Volume6
Issue number4
DOIs
StatePublished - Apr 1 2018

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

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    Nair, H. P., Liu, Y., Ruf, J. P., Schreiber, N. J., Shang, S. L., Baek, D. J., Goodge, B. H., Kourkoutis, L. F., Liu, Z. K., Shen, K. M., & Schlom, D. G. (2018). Synthesis science of SrRuO3 and CaRuO3 epitaxial films with high residual resistivity ratios. APL Materials, 6(4), [046101]. https://doi.org/10.1063/1.5023477