Systematics of electron mobility in Si/SiGe heterostructures

S. F. Nelson, K. Ismail, Thomas Nelson Jackson, J. J. Nocera, J. O. Chu, B. S. Meyerson

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

We have investigated limits to the low temperature electron mobility in modulation-doped Si/SiGe heterostructures grown by ultrahigh vacuum chemical vapor deposition. The temperature dependence and peak value of the mobility suggest that interface roughness is the chief scattering mechanism in samples with a thin buffer layer below the channel. Up to about 2 μm, increasing the thickness of the buffer layer raises the mobility. We have also observed a systematic increase of electron mobility with spacer (or setback) thickness, which is characteristic of remote ion scattering. The influence of background impurities is seen in the decrease of mobility with decreasing two-dimensional gas density.

Original languageEnglish (US)
Pages (from-to)794-796
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number6
DOIs
StatePublished - Dec 1 1993

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electron mobility
buffers
ion scattering
gas density
spacers
ultrahigh vacuum
roughness
vapor deposition
modulation
impurities
temperature dependence
scattering

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Nelson, S. F., Ismail, K., Jackson, T. N., Nocera, J. J., Chu, J. O., & Meyerson, B. S. (1993). Systematics of electron mobility in Si/SiGe heterostructures. Applied Physics Letters, 63(6), 794-796. https://doi.org/10.1063/1.109910
Nelson, S. F. ; Ismail, K. ; Jackson, Thomas Nelson ; Nocera, J. J. ; Chu, J. O. ; Meyerson, B. S. / Systematics of electron mobility in Si/SiGe heterostructures. In: Applied Physics Letters. 1993 ; Vol. 63, No. 6. pp. 794-796.
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Nelson, SF, Ismail, K, Jackson, TN, Nocera, JJ, Chu, JO & Meyerson, BS 1993, 'Systematics of electron mobility in Si/SiGe heterostructures', Applied Physics Letters, vol. 63, no. 6, pp. 794-796. https://doi.org/10.1063/1.109910

Systematics of electron mobility in Si/SiGe heterostructures. / Nelson, S. F.; Ismail, K.; Jackson, Thomas Nelson; Nocera, J. J.; Chu, J. O.; Meyerson, B. S.

In: Applied Physics Letters, Vol. 63, No. 6, 01.12.1993, p. 794-796.

Research output: Contribution to journalArticle

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