Ta-Ru-N diffusion barriers for high-temperature contacts to p-type SiC

C. M. Eichfeld, M. A. Horsey, S. E. Mohney, A. V. Adedeji, J. R. Williams

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Abstract

A new diffusion barrier, Ta-Ru-N, has been tested on ohmic contacts to p+-4H-SiC aged at 350 °C in air. Specific contact resistance measurements combined with X-ray diffraction, Auger electron spectroscopy, and X-ray photoelectron spectroscopy were used to evaluate the barriers. Upon aging, all ohmic contacts exhibited an initial change in resistance but stabilized within 100 h, with many samples surviving for 2000 h (the longest time tested). The Ru: Ta ratio in the barriers must be sufficiently high to obtain a long-lived barrier in air. Specific contact resistances as low as 3 × 10- 5 Ω cm2 were maintained after 2000 h of aging.

Original languageEnglish (US)
Pages (from-to)207-211
Number of pages5
JournalThin Solid Films
Volume485
Issue number1-2
DOIs
Publication statusPublished - Aug 1 2005

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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