Tantalum-Ruthenium diffusion barriers for contacts to SiC

S. H. Wang, Owen Arnold, Chad Eichfeld, Suzanne E. Mohney, A. V. Adedeji, J. R. Williams

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Tantalum-ruthenium diffusion barriers for contacts to SiC were investigated in this work. Stable specific contact resistances of (2 ±1) × 10-5 Ω cm2 and (4 ±2) × 10-5 Ω cm2 were measured on p-type 4H SiC for Al/Ni and Ni ohmic contacts, respectively, when they were beneath Ru-rich Ta-Ru barriers aged at 350 °C for 3000 h in air. Annealed Ni ohmic contacts on n-SiC aged at 350 °C in air for 1000 h (the longest time tested) are also very stable. Pull tests revealed greatly improved adhesion between layers in metallization stacks that contained Ta-Ru barriers in place of previously studied Ta-Ru-N barriers. A 5 nm Ta layer inserted between the Ru-rich Ta-Ru barriers and Au was found to further improve the adhesion of the metallization stacks.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005
Pages883-886
Number of pages4
EditionPART 2
StatePublished - Dec 1 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 2
Volume527-529
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Wang, S. H., Arnold, O., Eichfeld, C., Mohney, S. E., Adedeji, A. V., & Williams, J. R. (2006). Tantalum-Ruthenium diffusion barriers for contacts to SiC. In Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005 (PART 2 ed., pp. 883-886). (Materials Science Forum; Vol. 527-529, No. PART 2).