TCAD modeling of a lateral GaN HEMT using empirical data

Michael R. Hontz, Rongming Chu, Raghav Khanna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work presents a procedure for creating high-fidelity TCAD models of lateral GaN/AlGaN FETs. This modeling process is based on iterative refinement using experimental data as well as known device geometry. By tuning charge density in the channel of the device and scattering under the gate, both the transfer and forward curves of the device were accurately modeled. Knowledge of device geometry and anisotropic physics was used to accurately model the non-linear terminal capacitances of the device. This modeling procedure was performed on both a recessed gate device with full knowledge of the device's geometry. The model developed here will be used in future work to assess the impact of design decisions.

Original languageEnglish (US)
Title of host publicationAPEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages244-248
Number of pages5
ISBN (Electronic)9781538611807
DOIs
StatePublished - Apr 18 2018
Event33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018 - San Antonio, United States
Duration: Mar 4 2018Mar 8 2018

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
Volume2018-March

Conference

Conference33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018
CountryUnited States
CitySan Antonio
Period3/4/183/8/18

Fingerprint

High electron mobility transistors
Geometry
Field effect transistors
Charge density
Capacitance
Physics
Tuning
Scattering

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Hontz, M. R., Chu, R., & Khanna, R. (2018). TCAD modeling of a lateral GaN HEMT using empirical data. In APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition (pp. 244-248). (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; Vol. 2018-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEC.2018.8341017
Hontz, Michael R. ; Chu, Rongming ; Khanna, Raghav. / TCAD modeling of a lateral GaN HEMT using empirical data. APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 244-248 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).
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Hontz, MR, Chu, R & Khanna, R 2018, TCAD modeling of a lateral GaN HEMT using empirical data. in APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition. Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, vol. 2018-March, Institute of Electrical and Electronics Engineers Inc., pp. 244-248, 33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018, San Antonio, United States, 3/4/18. https://doi.org/10.1109/APEC.2018.8341017

TCAD modeling of a lateral GaN HEMT using empirical data. / Hontz, Michael R.; Chu, Rongming; Khanna, Raghav.

APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc., 2018. p. 244-248 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; Vol. 2018-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Hontz MR, Chu R, Khanna R. TCAD modeling of a lateral GaN HEMT using empirical data. In APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc. 2018. p. 244-248. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). https://doi.org/10.1109/APEC.2018.8341017