TDDB in a Deuterated Low-k Interlayer Dielectric

J. R. Lloyd, P. M. Lenahan, N. Mahmud, R. J. Waskiewicz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The behavior of normal and deuterated SiOC:H where the hydrogen in the dielectric was supplanted by deuterium was compared. The deuterated SiOC:H was seen to be significantly resistant to damage from TDDB (Time Dependent Dielectric Breakdown). These results strongly support the 'Lucky Electron' model for TDDB degradation in low-k dielectrics containing hydrogen.

Original languageEnglish (US)
Title of host publication2019 IEEE International Integrated Reliability Workshop, IIRW 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728122038
DOIs
StatePublished - Oct 2019
Event2019 IEEE International Integrated Reliability Workshop, IIRW 2019 - Fallen Leaf Lake, United States
Duration: Oct 13 2019Oct 17 2019

Publication series

NameIEEE International Integrated Reliability Workshop Final Report
Volume2019-October

Conference

Conference2019 IEEE International Integrated Reliability Workshop, IIRW 2019
CountryUnited States
CityFallen Leaf Lake
Period10/13/1910/17/19

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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