Technique for the measurement of d31 coefficient of piezoelectric thin films

Joseph F. Shepard, Paul J. Moses, Susan Trolier-McKinstry

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

This paper describes a new technique by which the d31 coefficient of piezoelectric thin films can be characterized. Silicon substrates coated with lead-zirconate titanate (PZT) are flexed while clamped in a uniform load rig. When stressed, the PZT film produces an electric charge which is monitored together with the change in applied load. The mechanical stress and thus the transverse piezoelectric coefficient can then be calculated. Experiments were conducted as a function of poling field strength and poling time. Results are dependent upon the value of applied stress, which itself is dependent upon the mechanical properties of the silicon substrate. Because the substrate is anisotropic, limiting d31 values were calculated. In general, d31 was found to be approximately 20 pC/N for field strengths above 130 kV/cm and poling times of less than 1 minute. d31 was increased more than a factor of three, to approximately 77 pC/N, when poled at 200 kV/cm for approximately 21 hours.

Original languageEnglish (US)
Pages (from-to)225-230
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume459
StatePublished - Jan 1 1997
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 5 1996

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Technique for the measurement of d<sub>31</sub> coefficient of piezoelectric thin films'. Together they form a unique fingerprint.

Cite this