Technology development & design for 22 nm InGaAs/InP-channel MOSFETs

M. J.W. Rodwell, M. Wistey, U. Singisetti, G. Burek, A. Gossard, S. Stemmer, R. Engel-Herbert, Y. Hwang, Y. Zheng, C. Van De Walle, P. Asbeck, Y. Taur, A. Kummel, B. Yu, D. Wang, Y. Yuan, C. Palmstrøm, Erdem Arkun, Paul Simmonds, P. McIntyreJ. Harris, M. V. Fischetti, C. Sachs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Because of the low electron effective mass and the high resulting carrier velocities, we are developing InGaAs/InP MOSFETs for potential application in VLSI circuits at scaling generations beyond 22 nm. We will report device design, review gate dielectric growth processes, and describe in detail the development of process modules for fabrication of fully selfaligned enhancement-mode devices. Key design challenges include the effect of the low density of states upon drive current and the effect of the low carrier mass on vertical confinement. Target electrical parameters include ̃5 mA/μm drive current and ̃7 mS/μm 2 transconductance. Key fabrication challenges include formation of self-aligned N+ source and drain contacts with < 15 ωμm and < 1 ωμm2 resistivity, and the formation and patterning of the gate metal and dielectric without damage to the thin underlying 4-6 nm channel layer.

Original languageEnglish (US)
Title of host publication2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
DOIs
StatePublished - 2008
Event2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 - Versailles, France
Duration: May 25 2008May 29 2008

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

Other2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
CountryFrance
CityVersailles
Period5/25/085/29/08

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Rodwell, M. J. W., Wistey, M., Singisetti, U., Burek, G., Gossard, A., Stemmer, S., Engel-Herbert, R., Hwang, Y., Zheng, Y., Van De Walle, C., Asbeck, P., Taur, Y., Kummel, A., Yu, B., Wang, D., Yuan, Y., Palmstrøm, C., Arkun, E., Simmonds, P., ... Sachs, C. (2008). Technology development & design for 22 nm InGaAs/InP-channel MOSFETs. In 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 [4703065] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2008.4703065