Tellurium-Assisted Low-Temperature Synthesis of MoS2 and WS2 Monolayers

Yongji Gong, Zhong Lin, Gonglan Ye, Gang Shi, Simin Feng, Yu Lei, Ana Laura Elias Arriaga, Nestor Perea Lopez, Robert Vajtai, Humberto Terrones, Zheng Liu, Mauricio Terrones Maldonado, Pulickel M. Ajayan

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

Chemical vapor deposition (CVD) is a scalable method able to synthesize MoS2 and WS2 monolayers. In this work, we reduced the synthesis temperature by 200 °C only by introducing tellurium (Te) into the CVD process. The as-synthesized MoS2 and WS2 monolayers show high phase purity and crystallinity. The optical and electrical performance of these materials is comparable to those synthesized at higher temperatures. We believe this work will accelerate the industrial synthesis of these semiconducting monolayers.

Original languageEnglish (US)
Pages (from-to)11658-11666
Number of pages9
JournalACS nano
Volume9
Issue number12
DOIs
StatePublished - Oct 26 2015

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Tellurium
tellurium
Monolayers
vapor deposition
Chemical vapor deposition
synthesis
crystallinity
purity
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Gong, Y., Lin, Z., Ye, G., Shi, G., Feng, S., Lei, Y., ... Ajayan, P. M. (2015). Tellurium-Assisted Low-Temperature Synthesis of MoS2 and WS2 Monolayers. ACS nano, 9(12), 11658-11666. https://doi.org/10.1021/acsnano.5b05594
Gong, Yongji ; Lin, Zhong ; Ye, Gonglan ; Shi, Gang ; Feng, Simin ; Lei, Yu ; Elias Arriaga, Ana Laura ; Perea Lopez, Nestor ; Vajtai, Robert ; Terrones, Humberto ; Liu, Zheng ; Terrones Maldonado, Mauricio ; Ajayan, Pulickel M. / Tellurium-Assisted Low-Temperature Synthesis of MoS2 and WS2 Monolayers. In: ACS nano. 2015 ; Vol. 9, No. 12. pp. 11658-11666.
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Gong, Y, Lin, Z, Ye, G, Shi, G, Feng, S, Lei, Y, Elias Arriaga, AL, Perea Lopez, N, Vajtai, R, Terrones, H, Liu, Z, Terrones Maldonado, M & Ajayan, PM 2015, 'Tellurium-Assisted Low-Temperature Synthesis of MoS2 and WS2 Monolayers', ACS nano, vol. 9, no. 12, pp. 11658-11666. https://doi.org/10.1021/acsnano.5b05594

Tellurium-Assisted Low-Temperature Synthesis of MoS2 and WS2 Monolayers. / Gong, Yongji; Lin, Zhong; Ye, Gonglan; Shi, Gang; Feng, Simin; Lei, Yu; Elias Arriaga, Ana Laura; Perea Lopez, Nestor; Vajtai, Robert; Terrones, Humberto; Liu, Zheng; Terrones Maldonado, Mauricio; Ajayan, Pulickel M.

In: ACS nano, Vol. 9, No. 12, 26.10.2015, p. 11658-11666.

Research output: Contribution to journalArticle

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T1 - Tellurium-Assisted Low-Temperature Synthesis of MoS2 and WS2 Monolayers

AU - Gong, Yongji

AU - Lin, Zhong

AU - Ye, Gonglan

AU - Shi, Gang

AU - Feng, Simin

AU - Lei, Yu

AU - Elias Arriaga, Ana Laura

AU - Perea Lopez, Nestor

AU - Vajtai, Robert

AU - Terrones, Humberto

AU - Liu, Zheng

AU - Terrones Maldonado, Mauricio

AU - Ajayan, Pulickel M.

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AB - Chemical vapor deposition (CVD) is a scalable method able to synthesize MoS2 and WS2 monolayers. In this work, we reduced the synthesis temperature by 200 °C only by introducing tellurium (Te) into the CVD process. The as-synthesized MoS2 and WS2 monolayers show high phase purity and crystallinity. The optical and electrical performance of these materials is comparable to those synthesized at higher temperatures. We believe this work will accelerate the industrial synthesis of these semiconducting monolayers.

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Gong Y, Lin Z, Ye G, Shi G, Feng S, Lei Y et al. Tellurium-Assisted Low-Temperature Synthesis of MoS2 and WS2 Monolayers. ACS nano. 2015 Oct 26;9(12):11658-11666. https://doi.org/10.1021/acsnano.5b05594