Tellurium-Assisted Low-Temperature Synthesis of MoS2 and WS2 Monolayers

Yongji Gong, Zhong Lin, Gonglan Ye, Gang Shi, Simin Feng, Yu Lei, Ana Laura Elías, Nestor Perea-Lopez, Robert Vajtai, Humberto Terrones, Zheng Liu, Mauricio Terrones, Pulickel M. Ajayan

Research output: Contribution to journalArticle

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Abstract

Chemical vapor deposition (CVD) is a scalable method able to synthesize MoS2 and WS2 monolayers. In this work, we reduced the synthesis temperature by 200 °C only by introducing tellurium (Te) into the CVD process. The as-synthesized MoS2 and WS2 monolayers show high phase purity and crystallinity. The optical and electrical performance of these materials is comparable to those synthesized at higher temperatures. We believe this work will accelerate the industrial synthesis of these semiconducting monolayers.

Original languageEnglish (US)
Pages (from-to)11658-11666
Number of pages9
JournalACS nano
Volume9
Issue number12
DOIs
StatePublished - Oct 26 2015

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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    Gong, Y., Lin, Z., Ye, G., Shi, G., Feng, S., Lei, Y., Elías, A. L., Perea-Lopez, N., Vajtai, R., Terrones, H., Liu, Z., Terrones, M., & Ajayan, P. M. (2015). Tellurium-Assisted Low-Temperature Synthesis of MoS2 and WS2 Monolayers. ACS nano, 9(12), 11658-11666. https://doi.org/10.1021/acsnano.5b05594