Abstract
Chemical vapor deposition (CVD) is a scalable method able to synthesize MoS2 and WS2 monolayers. In this work, we reduced the synthesis temperature by 200 °C only by introducing tellurium (Te) into the CVD process. The as-synthesized MoS2 and WS2 monolayers show high phase purity and crystallinity. The optical and electrical performance of these materials is comparable to those synthesized at higher temperatures. We believe this work will accelerate the industrial synthesis of these semiconducting monolayers.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 11658-11666 |
| Number of pages | 9 |
| Journal | ACS nano |
| Volume | 9 |
| Issue number | 12 |
| DOIs | |
| State | Published - Oct 26 2015 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Engineering(all)
- Physics and Astronomy(all)
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Tellurium-Assisted Low-Temperature Synthesis of MoS2 and WS2 Monolayers. / Gong, Yongji; Lin, Zhong; Ye, Gonglan; Shi, Gang; Feng, Simin; Lei, Yu; Elias Arriaga, Ana Laura; Perea Lopez, Nestor; Vajtai, Robert; Terrones, Humberto; Liu, Zheng; Terrones Maldonado, Mauricio; Ajayan, Pulickel M.
In: ACS nano, Vol. 9, No. 12, 26.10.2015, p. 11658-11666.Research output: Contribution to journal › Article
TY - JOUR
T1 - Tellurium-Assisted Low-Temperature Synthesis of MoS2 and WS2 Monolayers
AU - Gong, Yongji
AU - Lin, Zhong
AU - Ye, Gonglan
AU - Shi, Gang
AU - Feng, Simin
AU - Lei, Yu
AU - Elias Arriaga, Ana Laura
AU - Perea Lopez, Nestor
AU - Vajtai, Robert
AU - Terrones, Humberto
AU - Liu, Zheng
AU - Terrones Maldonado, Mauricio
AU - Ajayan, Pulickel M.
PY - 2015/10/26
Y1 - 2015/10/26
N2 - Chemical vapor deposition (CVD) is a scalable method able to synthesize MoS2 and WS2 monolayers. In this work, we reduced the synthesis temperature by 200 °C only by introducing tellurium (Te) into the CVD process. The as-synthesized MoS2 and WS2 monolayers show high phase purity and crystallinity. The optical and electrical performance of these materials is comparable to those synthesized at higher temperatures. We believe this work will accelerate the industrial synthesis of these semiconducting monolayers.
AB - Chemical vapor deposition (CVD) is a scalable method able to synthesize MoS2 and WS2 monolayers. In this work, we reduced the synthesis temperature by 200 °C only by introducing tellurium (Te) into the CVD process. The as-synthesized MoS2 and WS2 monolayers show high phase purity and crystallinity. The optical and electrical performance of these materials is comparable to those synthesized at higher temperatures. We believe this work will accelerate the industrial synthesis of these semiconducting monolayers.
UR - http://www.scopus.com/inward/record.url?scp=84952333964&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84952333964&partnerID=8YFLogxK
U2 - 10.1021/acsnano.5b05594
DO - 10.1021/acsnano.5b05594
M3 - Article
VL - 9
SP - 11658
EP - 11666
JO - ACS Nano
JF - ACS Nano
SN - 1936-0851
IS - 12
ER -