Temperature- and power-dependent phonon properties of suspended few layers of tungsten diselenide

Bartolomeu C. Viana, Rafael S. Alencar, Anderson G. Vieira, Victor Carozo, A. G.Souza Filho, Junjie Wang, Cleânio da Luz-Lima, S. Feng, Nestor Perea Lopez, Jun Zhu, Mauricio Terrones

Research output: Contribution to journalArticlepeer-review

Abstract

In this study we report the temperature- and laser power-dependence of the out-of-plane A1g Raman mode of mechanically exfoliated few-layered WSe2 suspended on Si3N4 holes. The A1g phonon frequency is red-shifted for a temperature in the range 77–548 K, with first-order temperature coefficients estimated to be −0.0083 and −0.0079 cm−1/K for suspended four- and six-layer WSe2, respectively. The laser power-dependence of suspended four-layer WSe2 sample is estimated to be −0.0079 cm−1/μW and no shift is observed for six-layer WSe2. By using the laser power-dependence of the suspended four layers WSe2 and the 1D Balandin's approach, we calculate the in-plane thermal conductivity of WSe2 at room temperature to be ∼57.7 W/m K.

Original languageEnglish (US)
Article number103169
JournalVibrational Spectroscopy
Volume111
DOIs
StatePublished - Nov 2020

All Science Journal Classification (ASJC) codes

  • Spectroscopy

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