Temperature and Stress Metrology of Ultra-Wide Bandgap β-Ga2O3 Thin Films

Bikramjit Chatterjee, Jacob H. Leach, Sarit Dhar, Sukwon Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The superior electronic properties of ultra-wide bandgap (UWBG) β-gallium oxide (β-Ga2O3) gives promise to developing power and radio frequency (RF) devices with improved size, weight, and power (SWaP), and efficiency over current state-of-the-art wide bandgap (WBG) devices based on SiC and GaN. However, self-heating is viewed as a major challenge that the β-Ga2O3 device technology will encounter. β-Ga2O3 devices are expected to handle higher power densities than WBG counterparts. However, the thermal conductivity of β-Ga2O3 is only on the order of 10-20 W/m-K, which is significantly lower than that for GaN or SiC. Therefore, large temperature gradients forming in β-Ga2O3 devices during operation can cause thermo-mechanical reliability issues. In this work, a micro-Raman metrology scheme was established to simultaneously measure the temperature rise and associated thermo-elastic stress induced in β-Ga2O3 thin films. To decouple the effect of temperature and stress, the proposed scheme utilizes multiple peaks in the β-Ga2O3 Raman spectrum. A 1 μm thick halide vapor phase epitaxy (HVPE) β-Ga2O3 layer grown on a sapphire substrate and a 3D thermo-mechanical multi-physics model was utilized to establish the measurement technique. The developed method can be used to determine the stress and temperature in β-Ga2O3 epi-layers consisting future UWBG electronic devices.

Original languageEnglish (US)
Title of host publicationProceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages202-207
Number of pages6
ISBN (Electronic)9781538612729
DOIs
StatePublished - Jul 24 2018
Event17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018 - San Diego, United States
Duration: May 29 2018Jun 1 2018

Publication series

NameProceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018

Other

Other17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018
CountryUnited States
CitySan Diego
Period5/29/186/1/18

All Science Journal Classification (ASJC) codes

  • Fluid Flow and Transfer Processes
  • Electrical and Electronic Engineering
  • Mechanics of Materials
  • Safety, Risk, Reliability and Quality

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