Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers

A. P. Zhang, G. Dang, F. Ren, J. Han, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Joan Marie Redwing, H. Cho, S. J. Pearton

Research output: Contribution to journalArticle

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Abstract

GaN and Al0.25Ga0.75N lateral Schottky rectifiers were fabricated either with (GaN) or without (AlGaN) edge termination. The reverse breakdown voltage VB (3.1 kV for GaN; 4.3 kV for AlGaN) displayed a negative temperature coefficient of -6.0±0.4V K-1 for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100 A cm-2 was ∼5 V for GaN and ∼7.5 V for AlGaN. The on-state resistances, RON, were 50 mΩcm2 for GaN and 75 mΩcm2 for AlGaN, producing figures-of-merit (VRB)2/RON of 192 and 246 MW cm-2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias.

Original languageEnglish (US)
Pages (from-to)3816-3818
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number25
DOIs
StatePublished - Jun 19 2000

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rectifiers
leakage
temperature dependence
electrical faults
figure of merit
current density
activation energy
electric potential
coefficients
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Zhang, A. P., Dang, G., Ren, F., Han, J., Polyakov, A. Y., Smirnov, N. B., ... Pearton, S. J. (2000). Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers. Applied Physics Letters, 76(25), 3816-3818. https://doi.org/10.1063/1.126791
Zhang, A. P. ; Dang, G. ; Ren, F. ; Han, J. ; Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Redwing, Joan Marie ; Cho, H. ; Pearton, S. J. / Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers. In: Applied Physics Letters. 2000 ; Vol. 76, No. 25. pp. 3816-3818.
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abstract = "GaN and Al0.25Ga0.75N lateral Schottky rectifiers were fabricated either with (GaN) or without (AlGaN) edge termination. The reverse breakdown voltage VB (3.1 kV for GaN; 4.3 kV for AlGaN) displayed a negative temperature coefficient of -6.0±0.4V K-1 for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100 A cm-2 was ∼5 V for GaN and ∼7.5 V for AlGaN. The on-state resistances, RON, were 50 mΩcm2 for GaN and 75 mΩcm2 for AlGaN, producing figures-of-merit (VRB)2/RON of 192 and 246 MW cm-2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias.",
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Zhang, AP, Dang, G, Ren, F, Han, J, Polyakov, AY, Smirnov, NB, Govorkov, AV, Redwing, JM, Cho, H & Pearton, SJ 2000, 'Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers', Applied Physics Letters, vol. 76, no. 25, pp. 3816-3818. https://doi.org/10.1063/1.126791

Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers. / Zhang, A. P.; Dang, G.; Ren, F.; Han, J.; Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Redwing, Joan Marie; Cho, H.; Pearton, S. J.

In: Applied Physics Letters, Vol. 76, No. 25, 19.06.2000, p. 3816-3818.

Research output: Contribution to journalArticle

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T1 - Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers

AU - Zhang, A. P.

AU - Dang, G.

AU - Ren, F.

AU - Han, J.

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Redwing, Joan Marie

AU - Cho, H.

AU - Pearton, S. J.

PY - 2000/6/19

Y1 - 2000/6/19

N2 - GaN and Al0.25Ga0.75N lateral Schottky rectifiers were fabricated either with (GaN) or without (AlGaN) edge termination. The reverse breakdown voltage VB (3.1 kV for GaN; 4.3 kV for AlGaN) displayed a negative temperature coefficient of -6.0±0.4V K-1 for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100 A cm-2 was ∼5 V for GaN and ∼7.5 V for AlGaN. The on-state resistances, RON, were 50 mΩcm2 for GaN and 75 mΩcm2 for AlGaN, producing figures-of-merit (VRB)2/RON of 192 and 246 MW cm-2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias.

AB - GaN and Al0.25Ga0.75N lateral Schottky rectifiers were fabricated either with (GaN) or without (AlGaN) edge termination. The reverse breakdown voltage VB (3.1 kV for GaN; 4.3 kV for AlGaN) displayed a negative temperature coefficient of -6.0±0.4V K-1 for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100 A cm-2 was ∼5 V for GaN and ∼7.5 V for AlGaN. The on-state resistances, RON, were 50 mΩcm2 for GaN and 75 mΩcm2 for AlGaN, producing figures-of-merit (VRB)2/RON of 192 and 246 MW cm-2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias.

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Zhang AP, Dang G, Ren F, Han J, Polyakov AY, Smirnov NB et al. Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers. Applied Physics Letters. 2000 Jun 19;76(25):3816-3818. https://doi.org/10.1063/1.126791