Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers

A. P. Zhang, G. Dang, F. Ren, J. Han, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. M. Redwing, H. Cho, S. J. Pearton

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GaN and Al0.25Ga0.75N lateral Schottky rectifiers were fabricated either with (GaN) or without (AlGaN) edge termination. The reverse breakdown voltage VB (3.1 kV for GaN; 4.3 kV for AlGaN) displayed a negative temperature coefficient of -6.0±0.4V K-1 for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100 A cm-2 was ∼5 V for GaN and ∼7.5 V for AlGaN. The on-state resistances, RON, were 50 mΩcm2 for GaN and 75 mΩcm2 for AlGaN, producing figures-of-merit (VRB)2/RON of 192 and 246 MW cm-2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias.

Original languageEnglish (US)
Pages (from-to)3816-3818
Number of pages3
JournalApplied Physics Letters
Issue number25
StatePublished - Jun 19 2000

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Zhang, A. P., Dang, G., Ren, F., Han, J., Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Redwing, J. M., Cho, H., & Pearton, S. J. (2000). Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers. Applied Physics Letters, 76(25), 3816-3818. https://doi.org/10.1063/1.126791