Temperature dependence of hydrogen implant on passivation of argon implant damage in silicon

H. C. Chien, S Ashok, M. C. Chen

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The influence of substrate temperature during atomic hydrogen treatment of Ar-implant damaged Si surfaces has been studies using the electrical properties of subsequently fabricated Schottky contacts. The recovery of the Schottky electrical characteristics toward the ideal is found to occur only at substrate temperatures above 150ºC. However, the Schottky barrier height itself is pinned by a very thin surface layer less than 100 nm thick, and the hydrogen passivation itself appears confined to the subsurface damage.

Original languageEnglish (US)
Pages (from-to)L1317-L1319
JournalJapanese Journal of Applied Physics
Volume27
Issue number7A
DOIs
StatePublished - Jan 1 1988

Fingerprint

Passivation
passivity
Argon
argon
damage
Silicon
Hydrogen
temperature dependence
silicon
Substrates
hydrogen
electric contacts
surface layers
Electric properties
recovery
electrical properties
Recovery
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Chien, H. C. ; Ashok, S ; Chen, M. C. / Temperature dependence of hydrogen implant on passivation of argon implant damage in silicon. In: Japanese Journal of Applied Physics. 1988 ; Vol. 27, No. 7A. pp. L1317-L1319.
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Temperature dependence of hydrogen implant on passivation of argon implant damage in silicon. / Chien, H. C.; Ashok, S; Chen, M. C.

In: Japanese Journal of Applied Physics, Vol. 27, No. 7A, 01.01.1988, p. L1317-L1319.

Research output: Contribution to journalArticle

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