Temperature-dependent I-V characteristics of a vertical In 0.53Ga0.47 tunnel FET

Saurabh Mookerjea, Dheeraj Mohata, Theresa Mayer, Vijay Narayanan, Suman Datta

Research output: Contribution to journalArticlepeer-review

181 Scopus citations

Abstract

We report on the experimental temperature-dependent characteristics of vertical In0.53Ga0.47As tunnel field-effect transistors (TFETs) at low drain bias to provide key insight into its device operation and design. Leakage floor IOFF) is determined by the ungated p +-i-n+ reverse bias leakage and is dominated by Shockley-Read-Hall generationrecombination current. The temperature dependence of subthreshold slope arises from tunneling into mid-gap states at the oxidesemiconductor interface, followed by thermal emission into the conduction band. At intermediate gate voltages, pure band-to-band tunneling dominates, while at higher gate voltages, current transport is diffusion limited. The temperature-dependent study of In0.53Ga0.47 TFET highlights the importance of passivating the IIIV and dielectric interface.

Original languageEnglish (US)
Article number5451179
Pages (from-to)564-566
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number6
DOIs
StatePublished - Jun 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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