We report on the experimental temperature-dependent characteristics of vertical In0.53Ga0.47As tunnel field-effect transistors (TFETs) at low drain bias to provide key insight into its device operation and design. Leakage floor IOFF) is determined by the ungated p +-i-n+ reverse bias leakage and is dominated by Shockley-Read-Hall generationrecombination current. The temperature dependence of subthreshold slope arises from tunneling into mid-gap states at the oxidesemiconductor interface, followed by thermal emission into the conduction band. At intermediate gate voltages, pure band-to-band tunneling dominates, while at higher gate voltages, current transport is diffusion limited. The temperature-dependent study of In0.53Ga0.47 TFET highlights the importance of passivating the IIIV and dielectric interface.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering