TY - JOUR
T1 - Temperature-Dependent RF Characteristics of AlO-Passivated WSe MOSFETs
AU - Xiong, Kuanchen
AU - Zhang, Xiaotian
AU - Li, Lei
AU - Zhang, Fu
AU - Davis, Benjamin
AU - Madjar, Asher
AU - Goritz, Alexander
AU - Wietstruck, Matthias
AU - Kaynak, Mehmet
AU - Strandwitz, Nicholas C.
AU - Terrones, Mauricio
AU - Redwing, Joan M.
AU - Hwang, James C.M.
N1 - Funding Information:
Manuscript received April 28, 2020; revised May 28, 2020; accepted June 1, 2020. Date of publication June 4, 2020; date of current version June 29, 2020. The work of Kuanchen Xiong, Xiaotian Zhang, Lei Li, Fu Zhang, Benjamin Davis, Asher Madjar, Nicholas C. Strandwitz, Mauricio Terrones, Joan M. Redwing, and James C. M. Hwang was supported in part by the National Science Foundation (NSF) under EFRI 2-DARE Grant 1433459. This work was supported in part by the NSF Cooperative Agreement under Grant DMR-1539916 and in part by the NSF under Grant NNCI-1542081. The review of this letter was arranged by Editor T. Palacios. (Corresponding author: James C. M. Hwang.) Kuanchen Xiong, Lei Li, and James C. M. Hwang are with the Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853 USA (e-mail: jch263@cornell.edu).
Funding Information:
The authors would like to thank Prof. S. Tiwari and Hyunjea Lee of Cornell University for insightful discussions, and Prof. H. G. Xing of Cornell University for facilitating electrical measurement. CVD WSe2 film for this work was provided by the Pennsylvania State University Two-Dimensional Crystal Consortium - Materials Innovation Platform (2DCC-MIP).
PY - 2020/7
Y1 - 2020/7
N2 - Of all two-dimensional semiconductor crystals, WSe2 is particularly interesting due to its sizable bandgap, high carrier mobility, and compatibility with large-scale synthesis. By passivating WSe2 MOSFETs with atomic-layer-deposited Al2O3, they are stable in room environment for more than five months. The passivation also increases their current capacity by two orders of magnitude. Their cutoff frequencies peak around room temperature, with the forward current cutoff frequency {f} {T} sim 0.6 GHz and the maximum frequency of oscillation {f}{{textit {MAX}}} sim 2 GHz. These results show WSe2 is a promising material for gigahertz thin-film transistors. However, if the surface passivation is not optimized, fixed charge in the passivation layer may lead to temporal and temperature instabilities.
AB - Of all two-dimensional semiconductor crystals, WSe2 is particularly interesting due to its sizable bandgap, high carrier mobility, and compatibility with large-scale synthesis. By passivating WSe2 MOSFETs with atomic-layer-deposited Al2O3, they are stable in room environment for more than five months. The passivation also increases their current capacity by two orders of magnitude. Their cutoff frequencies peak around room temperature, with the forward current cutoff frequency {f} {T} sim 0.6 GHz and the maximum frequency of oscillation {f}{{textit {MAX}}} sim 2 GHz. These results show WSe2 is a promising material for gigahertz thin-film transistors. However, if the surface passivation is not optimized, fixed charge in the passivation layer may lead to temporal and temperature instabilities.
UR - http://www.scopus.com/inward/record.url?scp=85087830247&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85087830247&partnerID=8YFLogxK
U2 - 10.1109/LED.2020.2999906
DO - 10.1109/LED.2020.2999906
M3 - Article
AN - SCOPUS:85087830247
VL - 41
SP - 1134
EP - 1137
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 7
M1 - 9108204
ER -