Temperature-Dependent RF Characteristics of AlO-Passivated WSe MOSFETs

Kuanchen Xiong, Xiaotian Zhang, Lei Li, Fu Zhang, Benjamin Davis, Asher Madjar, Alexander Goritz, Matthias Wietstruck, Mehmet Kaynak, Nicholas C. Strandwitz, Mauricio Terrones, Joan M. Redwing, James C.M. Hwang

Research output: Contribution to journalArticlepeer-review

Abstract

Of all two-dimensional semiconductor crystals, WSe2 is particularly interesting due to its sizable bandgap, high carrier mobility, and compatibility with large-scale synthesis. By passivating WSe2 MOSFETs with atomic-layer-deposited Al2O3, they are stable in room environment for more than five months. The passivation also increases their current capacity by two orders of magnitude. Their cutoff frequencies peak around room temperature, with the forward current cutoff frequency {f} {T} sim 0.6 GHz and the maximum frequency of oscillation {f}{{textit {MAX}}} sim 2 GHz. These results show WSe2 is a promising material for gigahertz thin-film transistors. However, if the surface passivation is not optimized, fixed charge in the passivation layer may lead to temporal and temperature instabilities.

Original languageEnglish (US)
Article number9108204
Pages (from-to)1134-1137
Number of pages4
JournalIEEE Electron Device Letters
Volume41
Issue number7
DOIs
StatePublished - Jul 2020

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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