Temperature-independent transport in high-mobility pentacene transistors

S. F. Nelson, Y. Y. Lin, D. J. Gundlach, Thomas Nelson Jackson

Research output: Contribution to journalArticle

793 Citations (Scopus)

Abstract

The charge-carrier transport mechanism in the organic semiconductor pentacene is explored using thin-film transistor structures. The variation of the field-effect mobility with temperature differs from sample to sample, ranging from thermally activated to temperature-independent behavior. This result excludes thermally activated hopping as the fundamental transport mechanism in pentacene thin films, and suggests that traps and/or contact effects may strongly influence the observed characteristics. These results also indicate that field-effect transistors may not be appropriate vehicles for illuminating basic transport mechanisms in organic materials.

Original languageEnglish (US)
Pages (from-to)1854-1856
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number15
DOIs
StatePublished - Dec 1 1998

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transistors
organic semiconductors
thin films
organic materials
illuminating
temperature
charge carriers
vehicles
field effect transistors
traps

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Nelson, S. F. ; Lin, Y. Y. ; Gundlach, D. J. ; Jackson, Thomas Nelson. / Temperature-independent transport in high-mobility pentacene transistors. In: Applied Physics Letters. 1998 ; Vol. 72, No. 15. pp. 1854-1856.
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Temperature-independent transport in high-mobility pentacene transistors. / Nelson, S. F.; Lin, Y. Y.; Gundlach, D. J.; Jackson, Thomas Nelson.

In: Applied Physics Letters, Vol. 72, No. 15, 01.12.1998, p. 1854-1856.

Research output: Contribution to journalArticle

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