Temperature-independent transport in high-mobility pentacene transistors

S. F. Nelson; Y. Y. Lin; D. J. Gundlach; Thomas Nelson Jackson

doi:10.1063/1.121205

Temperature-independent transport in high-mobility pentacene transistors

S. F. Nelson, Y. Y. Lin, D. J. Gundlach, Thomas Nelson Jackson

Materials Research Institute (MRI)

Research output: Contribution to journal › Article

793 Citations (Scopus)

Abstract

The charge-carrier transport mechanism in the organic semiconductor pentacene is explored using thin-film transistor structures. The variation of the field-effect mobility with temperature differs from sample to sample, ranging from thermally activated to temperature-independent behavior. This result excludes thermally activated hopping as the fundamental transport mechanism in pentacene thin films, and suggests that traps and/or contact effects may strongly influence the observed characteristics. These results also indicate that field-effect transistors may not be appropriate vehicles for illuminating basic transport mechanisms in organic materials.

Original language	English (US)
Pages (from-to)	1854-1856
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	15
DOIs	https://doi.org/10.1063/1.121205
State	Published - Dec 1 1998

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transistors

organic semiconductors

thin films

organic materials

illuminating

temperature

charge carriers

vehicles

field effect transistors

traps

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Nelson, S. F., Lin, Y. Y., Gundlach, D. J., & Jackson, T. N. (1998). Temperature-independent transport in high-mobility pentacene transistors. Applied Physics Letters, 72(15), 1854-1856. https://doi.org/10.1063/1.121205

Nelson, S. F. ; Lin, Y. Y. ; Gundlach, D. J. ; Jackson, Thomas Nelson. / Temperature-independent transport in high-mobility pentacene transistors. In: Applied Physics Letters. 1998 ; Vol. 72, No. 15. pp. 1854-1856.

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Nelson, SF, Lin, YY, Gundlach, DJ & Jackson, TN 1998, 'Temperature-independent transport in high-mobility pentacene transistors', Applied Physics Letters, vol. 72, no. 15, pp. 1854-1856. https://doi.org/10.1063/1.121205

Temperature-independent transport in high-mobility pentacene transistors. / Nelson, S. F.; Lin, Y. Y.; Gundlach, D. J.; Jackson, Thomas Nelson.

In: Applied Physics Letters, Vol. 72, No. 15, 01.12.1998, p. 1854-1856.

Research output: Contribution to journal › Article

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Nelson SF, Lin YY, Gundlach DJ, Jackson TN. Temperature-independent transport in high-mobility pentacene transistors. Applied Physics Letters. 1998 Dec 1;72(15):1854-1856. https://doi.org/10.1063/1.121205

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10.1063/1.121205