Tensile-strained nanoscale Ge/In0.16Ga0.84As heterostructure for tunnel field-effect transistor

Yan Zhu, Deepam Maurya, Shashank Priya, Mantu K. Hudait

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Tensile strained Ge/In0.16Ga0.84As heterostructure was grown in situ by molecular beam epitaxy using two separated growth chambers for Ge and III-V materials. Controlled growth conditions led to the presence of 0.75% in-plane tensile strain within Ge layer. High-resolution transmission electron microscopy confirmed pseudomorphic Ge with high crystalline quality and a sharp Ge/In0.16Ga0.84As heterointerface. Atomic force microscopy revealed a uniform two-dimensional cross-hatch surface morphology with a root-mean-square roughness of 1.26 nm. X-ray photoelectron spectroscopy demonstrated reduced tunneling-barrier-height compared with Ge/GaAs heterostructure. The superior structural properties suggest tensile strained Ge/In0.16Ga0.84As heterostructure would be a promising candidate for high-performance and energy-efficient tunnel field-effect transistor applications.

Original languageEnglish (US)
Pages (from-to)4947-4953
Number of pages7
JournalACS Applied Materials and Interfaces
Volume6
Issue number7
DOIs
StatePublished - Apr 9 2014

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Field effect transistors
Heterojunctions
Tunnels
Hatches
Tensile strain
High resolution transmission electron microscopy
Molecular beam epitaxy
Surface morphology
Structural properties
Atomic force microscopy
X ray photoelectron spectroscopy
Surface roughness
Crystalline materials

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

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title = "Tensile-strained nanoscale Ge/In0.16Ga0.84As heterostructure for tunnel field-effect transistor",
abstract = "Tensile strained Ge/In0.16Ga0.84As heterostructure was grown in situ by molecular beam epitaxy using two separated growth chambers for Ge and III-V materials. Controlled growth conditions led to the presence of 0.75{\%} in-plane tensile strain within Ge layer. High-resolution transmission electron microscopy confirmed pseudomorphic Ge with high crystalline quality and a sharp Ge/In0.16Ga0.84As heterointerface. Atomic force microscopy revealed a uniform two-dimensional cross-hatch surface morphology with a root-mean-square roughness of 1.26 nm. X-ray photoelectron spectroscopy demonstrated reduced tunneling-barrier-height compared with Ge/GaAs heterostructure. The superior structural properties suggest tensile strained Ge/In0.16Ga0.84As heterostructure would be a promising candidate for high-performance and energy-efficient tunnel field-effect transistor applications.",
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Tensile-strained nanoscale Ge/In0.16Ga0.84As heterostructure for tunnel field-effect transistor. / Zhu, Yan; Maurya, Deepam; Priya, Shashank; Hudait, Mantu K.

In: ACS Applied Materials and Interfaces, Vol. 6, No. 7, 09.04.2014, p. 4947-4953.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Tensile-strained nanoscale Ge/In0.16Ga0.84As heterostructure for tunnel field-effect transistor

AU - Zhu, Yan

AU - Maurya, Deepam

AU - Priya, Shashank

AU - Hudait, Mantu K.

PY - 2014/4/9

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N2 - Tensile strained Ge/In0.16Ga0.84As heterostructure was grown in situ by molecular beam epitaxy using two separated growth chambers for Ge and III-V materials. Controlled growth conditions led to the presence of 0.75% in-plane tensile strain within Ge layer. High-resolution transmission electron microscopy confirmed pseudomorphic Ge with high crystalline quality and a sharp Ge/In0.16Ga0.84As heterointerface. Atomic force microscopy revealed a uniform two-dimensional cross-hatch surface morphology with a root-mean-square roughness of 1.26 nm. X-ray photoelectron spectroscopy demonstrated reduced tunneling-barrier-height compared with Ge/GaAs heterostructure. The superior structural properties suggest tensile strained Ge/In0.16Ga0.84As heterostructure would be a promising candidate for high-performance and energy-efficient tunnel field-effect transistor applications.

AB - Tensile strained Ge/In0.16Ga0.84As heterostructure was grown in situ by molecular beam epitaxy using two separated growth chambers for Ge and III-V materials. Controlled growth conditions led to the presence of 0.75% in-plane tensile strain within Ge layer. High-resolution transmission electron microscopy confirmed pseudomorphic Ge with high crystalline quality and a sharp Ge/In0.16Ga0.84As heterointerface. Atomic force microscopy revealed a uniform two-dimensional cross-hatch surface morphology with a root-mean-square roughness of 1.26 nm. X-ray photoelectron spectroscopy demonstrated reduced tunneling-barrier-height compared with Ge/GaAs heterostructure. The superior structural properties suggest tensile strained Ge/In0.16Ga0.84As heterostructure would be a promising candidate for high-performance and energy-efficient tunnel field-effect transistor applications.

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