We report on terahertz (THz) surface impedance measurement of an epitaxial Mg B2 thin film using time domain THz spectroscopy. We show that the surface resistance of the Mg B2 film is much lower than that of Y Ba2 Cu3 O7-δ and copper in the THz range. A linear dependence of the surface reactance on frequency is observed, yielding a penetration depth of about 100 nm at low temperatures. The measurements agree qualitatively with calculations based on impurity scattering in the Born limit. Our results clearly indicate that Mg B2 thin films have a great potential for THz electronic applications.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Aug 29 2005|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)