TF004 - Interfacing complex oxides to gallium nitride

M. D. Losego, H. S. Craft, S. Mita, T. Rice, R. Collazo, Z. Sitar, Jon-Paul Maria

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Integration of functional complex oxides with gallium nitride is attractive for advanced device architectures including smart FETs and high-temperature electronics. Inclusion of large bandgap interfacial oxide layers are of interest for band line-up compatibility. This presentation reviews work on the epitaxial growth of large bandgap rocksalt oxide buffer layers including MgO and CaO by molecular beam epitaxy. It also discusses the epitaxial deposition of ferroelectric oxides by rf magnetron sputtering.

Original languageEnglish (US)
Title of host publication17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Volume2
DOIs
StatePublished - Dec 1 2008
Event17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 - Santa Fe, NM, United States
Duration: Feb 23 2008Feb 28 2008

Other

Other17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
CountryUnited States
CitySanta Fe, NM
Period2/23/082/28/08

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Losego, M. D., Craft, H. S., Mita, S., Rice, T., Collazo, R., Sitar, Z., & Maria, J-P. (2008). TF004 - Interfacing complex oxides to gallium nitride. In 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 (Vol. 2). [4693846] https://doi.org/10.1109/ISAF.2008.4693846