The 2018 GaN power electronics roadmap

H. Amano, Y. Baines, E. Beam, Matteo Borga, T. Bouchet, Paul R. Chalker, M. Charles, Kevin J. Chen, Nadim Chowdhury, Rongming Chu, Carlo De Santi, Maria Merlyne De Souza, Stefaan Decoutere, L. Di Cioccio, Bernd Eckardt, Takashi Egawa, P. Fay, Joseph J. Freedsman, L. Guido, Oliver Häberlen & 45 others Geoff Haynes, Thomas Heckel, Dilini Hemakumara, Peter Houston, Jie Hu, Mengyuan Hua, Qingyun Huang, Alex Huang, Sheng Jiang, H. Kawai, Dan Kinzer, Martin Kuball, Ashwani Kumar, Kean Boon Lee, Xu Li, Denis Marcon, Martin März, R. McCarthy, Gaudenzio Meneghesso, Matteo Meneghini, E. Morvan, A. Nakajima, E. M.S. Narayanan, Stephen Oliver, Tomás Palacios, Daniel Piedra, M. Plissonnier, R. Reddy, Min Sun, Iain Thayne, A. Torres, Nicola Trivellin, V. Unni, Michael J. Uren, Marleen Van Hove, David J. Wallis, J. Wang, J. Xie, S. Yagi, Shu Yang, C. Youtsey, Ruiyang Yu, Enrico Zanoni, Stefan Zeltner, Yuhao Zhang

Research output: Contribution to journalReview article

108 Citations (Scopus)

Abstract

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

Original languageEnglish (US)
Article number163001
JournalJournal of Physics D: Applied Physics
Volume51
Issue number16
DOIs
StatePublished - Mar 26 2018

Fingerprint

Gallium nitride
gallium nitrides
Power electronics
electronics
Transistors
transistors
Semiconductor materials
Electric network topology
commercialization
Electron mobility
electric field strength
Silicon
cusps
electron mobility
packaging
Photonics
economics
emerging
Industry
Packaging

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Amano, H., Baines, Y., Beam, E., Borga, M., Bouchet, T., Chalker, P. R., ... Zhang, Y. (2018). The 2018 GaN power electronics roadmap. Journal of Physics D: Applied Physics, 51(16), [163001]. https://doi.org/10.1088/1361-6463/aaaf9d
Amano, H. ; Baines, Y. ; Beam, E. ; Borga, Matteo ; Bouchet, T. ; Chalker, Paul R. ; Charles, M. ; Chen, Kevin J. ; Chowdhury, Nadim ; Chu, Rongming ; De Santi, Carlo ; De Souza, Maria Merlyne ; Decoutere, Stefaan ; Di Cioccio, L. ; Eckardt, Bernd ; Egawa, Takashi ; Fay, P. ; Freedsman, Joseph J. ; Guido, L. ; Häberlen, Oliver ; Haynes, Geoff ; Heckel, Thomas ; Hemakumara, Dilini ; Houston, Peter ; Hu, Jie ; Hua, Mengyuan ; Huang, Qingyun ; Huang, Alex ; Jiang, Sheng ; Kawai, H. ; Kinzer, Dan ; Kuball, Martin ; Kumar, Ashwani ; Lee, Kean Boon ; Li, Xu ; Marcon, Denis ; März, Martin ; McCarthy, R. ; Meneghesso, Gaudenzio ; Meneghini, Matteo ; Morvan, E. ; Nakajima, A. ; Narayanan, E. M.S. ; Oliver, Stephen ; Palacios, Tomás ; Piedra, Daniel ; Plissonnier, M. ; Reddy, R. ; Sun, Min ; Thayne, Iain ; Torres, A. ; Trivellin, Nicola ; Unni, V. ; Uren, Michael J. ; Van Hove, Marleen ; Wallis, David J. ; Wang, J. ; Xie, J. ; Yagi, S. ; Yang, Shu ; Youtsey, C. ; Yu, Ruiyang ; Zanoni, Enrico ; Zeltner, Stefan ; Zhang, Yuhao. / The 2018 GaN power electronics roadmap. In: Journal of Physics D: Applied Physics. 2018 ; Vol. 51, No. 16.
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abstract = "Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.",
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Amano, H, Baines, Y, Beam, E, Borga, M, Bouchet, T, Chalker, PR, Charles, M, Chen, KJ, Chowdhury, N, Chu, R, De Santi, C, De Souza, MM, Decoutere, S, Di Cioccio, L, Eckardt, B, Egawa, T, Fay, P, Freedsman, JJ, Guido, L, Häberlen, O, Haynes, G, Heckel, T, Hemakumara, D, Houston, P, Hu, J, Hua, M, Huang, Q, Huang, A, Jiang, S, Kawai, H, Kinzer, D, Kuball, M, Kumar, A, Lee, KB, Li, X, Marcon, D, März, M, McCarthy, R, Meneghesso, G, Meneghini, M, Morvan, E, Nakajima, A, Narayanan, EMS, Oliver, S, Palacios, T, Piedra, D, Plissonnier, M, Reddy, R, Sun, M, Thayne, I, Torres, A, Trivellin, N, Unni, V, Uren, MJ, Van Hove, M, Wallis, DJ, Wang, J, Xie, J, Yagi, S, Yang, S, Youtsey, C, Yu, R, Zanoni, E, Zeltner, S & Zhang, Y 2018, 'The 2018 GaN power electronics roadmap', Journal of Physics D: Applied Physics, vol. 51, no. 16, 163001. https://doi.org/10.1088/1361-6463/aaaf9d

The 2018 GaN power electronics roadmap. / Amano, H.; Baines, Y.; Beam, E.; Borga, Matteo; Bouchet, T.; Chalker, Paul R.; Charles, M.; Chen, Kevin J.; Chowdhury, Nadim; Chu, Rongming; De Santi, Carlo; De Souza, Maria Merlyne; Decoutere, Stefaan; Di Cioccio, L.; Eckardt, Bernd; Egawa, Takashi; Fay, P.; Freedsman, Joseph J.; Guido, L.; Häberlen, Oliver; Haynes, Geoff; Heckel, Thomas; Hemakumara, Dilini; Houston, Peter; Hu, Jie; Hua, Mengyuan; Huang, Qingyun; Huang, Alex; Jiang, Sheng; Kawai, H.; Kinzer, Dan; Kuball, Martin; Kumar, Ashwani; Lee, Kean Boon; Li, Xu; Marcon, Denis; März, Martin; McCarthy, R.; Meneghesso, Gaudenzio; Meneghini, Matteo; Morvan, E.; Nakajima, A.; Narayanan, E. M.S.; Oliver, Stephen; Palacios, Tomás; Piedra, Daniel; Plissonnier, M.; Reddy, R.; Sun, Min; Thayne, Iain; Torres, A.; Trivellin, Nicola; Unni, V.; Uren, Michael J.; Van Hove, Marleen; Wallis, David J.; Wang, J.; Xie, J.; Yagi, S.; Yang, Shu; Youtsey, C.; Yu, Ruiyang; Zanoni, Enrico; Zeltner, Stefan; Zhang, Yuhao.

In: Journal of Physics D: Applied Physics, Vol. 51, No. 16, 163001, 26.03.2018.

Research output: Contribution to journalReview article

TY - JOUR

T1 - The 2018 GaN power electronics roadmap

AU - Amano, H.

AU - Baines, Y.

AU - Beam, E.

AU - Borga, Matteo

AU - Bouchet, T.

AU - Chalker, Paul R.

AU - Charles, M.

AU - Chen, Kevin J.

AU - Chowdhury, Nadim

AU - Chu, Rongming

AU - De Santi, Carlo

AU - De Souza, Maria Merlyne

AU - Decoutere, Stefaan

AU - Di Cioccio, L.

AU - Eckardt, Bernd

AU - Egawa, Takashi

AU - Fay, P.

AU - Freedsman, Joseph J.

AU - Guido, L.

AU - Häberlen, Oliver

AU - Haynes, Geoff

AU - Heckel, Thomas

AU - Hemakumara, Dilini

AU - Houston, Peter

AU - Hu, Jie

AU - Hua, Mengyuan

AU - Huang, Qingyun

AU - Huang, Alex

AU - Jiang, Sheng

AU - Kawai, H.

AU - Kinzer, Dan

AU - Kuball, Martin

AU - Kumar, Ashwani

AU - Lee, Kean Boon

AU - Li, Xu

AU - Marcon, Denis

AU - März, Martin

AU - McCarthy, R.

AU - Meneghesso, Gaudenzio

AU - Meneghini, Matteo

AU - Morvan, E.

AU - Nakajima, A.

AU - Narayanan, E. M.S.

AU - Oliver, Stephen

AU - Palacios, Tomás

AU - Piedra, Daniel

AU - Plissonnier, M.

AU - Reddy, R.

AU - Sun, Min

AU - Thayne, Iain

AU - Torres, A.

AU - Trivellin, Nicola

AU - Unni, V.

AU - Uren, Michael J.

AU - Van Hove, Marleen

AU - Wallis, David J.

AU - Wang, J.

AU - Xie, J.

AU - Yagi, S.

AU - Yang, Shu

AU - Youtsey, C.

AU - Yu, Ruiyang

AU - Zanoni, Enrico

AU - Zeltner, Stefan

AU - Zhang, Yuhao

PY - 2018/3/26

Y1 - 2018/3/26

N2 - Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

AB - Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

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U2 - 10.1088/1361-6463/aaaf9d

DO - 10.1088/1361-6463/aaaf9d

M3 - Review article

VL - 51

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

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M1 - 163001

ER -

Amano H, Baines Y, Beam E, Borga M, Bouchet T, Chalker PR et al. The 2018 GaN power electronics roadmap. Journal of Physics D: Applied Physics. 2018 Mar 26;51(16). 163001. https://doi.org/10.1088/1361-6463/aaaf9d