The A-MOSFET-A majority carrier accumulation MOSFET

Pierre E. Schmidt, Mukunda B. Das, Paul D. Esqueda

Research output: Contribution to journalArticlepeer-review

Abstract

A novel MOSFET device structure is proposed that operates on the principle of majority carrier accumulation in the channel. The basic current equation is obtained for an n-channel structure.

Original languageEnglish (US)
Pages (from-to)777-779
Number of pages3
JournalSolid State Electronics
Volume25
Issue number8
DOIs
StatePublished - Aug 1982

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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