TY - JOUR
T1 - The analysis of electrical performances of nanowires silicon solar cells
AU - Li, Haofeng
AU - Jia, Rui
AU - Ding, Wuchang
AU - Chen, Chen
AU - Meng, Yanlong
AU - Liu, Xinyu
N1 - Funding Information:
We would like to thank Dr. Christiane D. Pasqualini for providing LB tumor, Dr. Thomas P. Loughran for valuable discussion, Dr. Juan Carlos Otaso and Dr. Virna Barcala for critical comnmnts and discussion. We would also thank Leslie Malek for comments on the manuscript. This work was supported by Grants from the Argentine National Research Council (CONICET) and The Third World Academy of Sciences (TWAS).
PY - 2011/12
Y1 - 2011/12
N2 - A theoretical model of silicon solar cells with ultra-small textured surface has been established based on depletion approximation and drift diffusion theory. The ultra-small textured surface achieves the low reflectance by multiple reflections among the silicon nanowires (NWs). The electrical performances of the solar cells, including open circuit voltage (V oc), short circuit current (I sc) and conversion efficiency (η), are analyzed by the theoretical model. The results show that the low reflectance is not the only pursuit in manufacturing the Si NWs solar cells. Other factors including optimizing the surface passivation, improving the silicon wafers quality and designing the proper nanowire length should be considered together with NWs structure.
AB - A theoretical model of silicon solar cells with ultra-small textured surface has been established based on depletion approximation and drift diffusion theory. The ultra-small textured surface achieves the low reflectance by multiple reflections among the silicon nanowires (NWs). The electrical performances of the solar cells, including open circuit voltage (V oc), short circuit current (I sc) and conversion efficiency (η), are analyzed by the theoretical model. The results show that the low reflectance is not the only pursuit in manufacturing the Si NWs solar cells. Other factors including optimizing the surface passivation, improving the silicon wafers quality and designing the proper nanowire length should be considered together with NWs structure.
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U2 - 10.1007/s11431-011-4592-9
DO - 10.1007/s11431-011-4592-9
M3 - Article
AN - SCOPUS:81855183227
SN - 1674-7321
VL - 54
SP - 3341
EP - 3346
JO - Science China Technological Sciences
JF - Science China Technological Sciences
IS - 12
ER -