The chemistry of GaN growth

T. F. Kuech, Shulin Gu, Ramchandra Wate, Ling Zhang, Jingxi Sun, J. A. Dumesic, J. M. Redwing

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

The development of new chemically based growth techniques has opened the range of possible GaN applications. This paper reviews some of the challenges in the chemically based growth of GaN and related materials. Ammonothermal-based growth, hydride vapor phase epitaxy and metal organic vapor phase epitaxy (MOVPE) are chemically complex systems wherein the underlying mechanisms of growth are not well understood at present. All these systems require substantial experimental and theoretical efforts to determine the nature and kinetics of GaN growth. In the case of metal organic vapor phase epitaxy, the application of computational techniques based on density functional theory have augmented the more conventional experimental approaches to determining the growth chemistry. These chemical reaction schemes, when combined with computational thermal-fluid models of the reactor environment, provide the opportunity to predict growth rates, uniformity and eventually materials properties.

Original languageEnglish (US)
Pages (from-to)G1.1.1-G1.1.11
JournalMaterials Research Society Symposium - Proceedings
Volume639
StatePublished - Dec 1 2001
EventGaN and Related Alloys 2000 - Boston, MA, United States
Duration: Nov 27 2000Dec 1 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Kuech, T. F., Gu, S., Wate, R., Zhang, L., Sun, J., Dumesic, J. A., & Redwing, J. M. (2001). The chemistry of GaN growth. Materials Research Society Symposium - Proceedings, 639, G1.1.1-G1.1.11.