The degradation of MOSFETs induced by the via etching of interlayer low-k polymers

Levent Trabzon, Osama O. Awadelkarim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We report on the effects of via etching through two low-k polymers (FLARE and BCB) used as interlayer dielectrics, on the prerformance of 0.35 - m long n-channel MOSFETs with 45-Å-thick gate oxides. It is observed that the via etching of the polymers damages the MOSFET and that this damage is severer in the case of BCB via etching. The inclusion of and insulating Si3N4 layer underneath the polymer is found to be very effective in reducing the MOSFET's damage. Alternatively, annealing in forming gas at 350 °C for 30 min after the via etching can further eliminate device damage.

Original languageEnglish (US)
Title of host publicationICM 2001 Proceedings - 13th International Conference on Microelectronics
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages103-106
Number of pages4
ISBN (Electronic)078037522X
DOIs
StatePublished - Jan 1 2001
Event13th International Conference on Microelectronics, ICM 2001 - Rabat, Morocco
Duration: Oct 29 2001Oct 31 2001

Publication series

NameProceedings of the International Conference on Microelectronics, ICM
Volume2001-January

Other

Other13th International Conference on Microelectronics, ICM 2001
CountryMorocco
CityRabat
Period10/29/0110/31/01

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Trabzon, L., & Awadelkarim, O. O. (2001). The degradation of MOSFETs induced by the via etching of interlayer low-k polymers. In ICM 2001 Proceedings - 13th International Conference on Microelectronics (pp. 103-106). [997498] (Proceedings of the International Conference on Microelectronics, ICM; Vol. 2001-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICM.2001.997498