The deprotection reaction front profile in model 193 nm methacrylate-based chemically amplified photoresists

Bryan Vogt, Shuhui Kang, Vivek M. Prabhu, Ashwin Rao, Eric K. Lin, Sushil K. Satija, Karen Turnquest, Wen Li Wu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Scopus citations

Abstract

An understanding of acid diffusion-reaction in chemically amplified photoresists during the post-exposure bake (PEB) is critical for both critical dimension (CD) and line edge roughness (LER) control. Despite its importance, there remains insufficient understanding of the diffusion-reaction process. This is due in part to the complex interplay between diffusion and reaction where the deprotection of the resin modifies the local acid diffusivity which in turn changes the rate of deprotection. Here, we report the direct measurement of the reaction diffusion front at a model line edge from neutron reflectivity and Fourier transform infrared spectroscopy measurements. The photoacid generator size influences the reaction extent and breath of the deprotection profile. A larger photoacid results in a sharper deprotection profile and a shorter reaction length. Under the same post-exposure bake time and temperature, the smaller photoacid leads to a much broader deprotection profile. These measurements illustrate the complexity of the reaction-diffusion process.

Original languageEnglish (US)
Title of host publicationAdvances in Resist Technology and Processing XXIII
DOIs
StatePublished - Jul 10 2006
EventAdvances in Resist Technology and Processing XXIII - San JOse, CA, United States
Duration: Feb 20 2006Feb 22 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6153 I
ISSN (Print)0277-786X

Conference

ConferenceAdvances in Resist Technology and Processing XXIII
CountryUnited States
CitySan JOse, CA
Period2/20/062/22/06

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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    Vogt, B., Kang, S., Prabhu, V. M., Rao, A., Lin, E. K., Satija, S. K., Turnquest, K., & Wu, W. L. (2006). The deprotection reaction front profile in model 193 nm methacrylate-based chemically amplified photoresists. In Advances in Resist Technology and Processing XXIII [615316] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6153 I). https://doi.org/10.1117/12.656464