Abstract
For current limitation of a single low voltage enhancement mode GaN HEMT, paralleling of GaN HEMT are essential in high current and low voltage applications. Through parallel GaN HEMT, the converter will increase the power handling capability and realize high efficiency. Driving paralleled operation GaN HEMT needs special care on parameters design of both driving circuit and power device layout, because the low gate-to-source maximum voltage (Vgs) rating and low gate threshold voltage (Vth) raise some strict constrains and challenges. This paper presents the driving challenges in paralleling of GaN devices in an isolated dc-dc converter. The design rules for gate driver and PCB layout are concluded based on the analysis of parasitic. The hardware prototype of a 300W flyback forward isolated converter with paralleling of GaN devices is implemented and presented in this paper.
| Original language | English (US) |
|---|---|
| Title of host publication | 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 30-35 |
| Number of pages | 6 |
| ISBN (Electronic) | 9781538643921 |
| DOIs | |
| State | Published - May 1 2018 |
| Event | 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 - Xi'an, China Duration: May 16 2018 → May 18 2018 |
Publication series
| Name | 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 |
|---|
Conference
| Conference | 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 |
|---|---|
| Country | China |
| City | Xi'an |
| Period | 5/16/18 → 5/18/18 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Control and Optimization
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering
Cite this
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The Drive Circuit Design for Paralleling Operation of Enhancement GaN HEMT in an Isolated DC-DC converter. / Zhang, Yajing; Wang, Jiuhe; Li, Hong; Wang, Lijie; Li, Yan; Zheng, Trillion Q.
2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 30-35 8734540 (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - The Drive Circuit Design for Paralleling Operation of Enhancement GaN HEMT in an Isolated DC-DC converter
AU - Zhang, Yajing
AU - Wang, Jiuhe
AU - Li, Hong
AU - Wang, Lijie
AU - Li, Yan
AU - Zheng, Trillion Q.
PY - 2018/5/1
Y1 - 2018/5/1
N2 - For current limitation of a single low voltage enhancement mode GaN HEMT, paralleling of GaN HEMT are essential in high current and low voltage applications. Through parallel GaN HEMT, the converter will increase the power handling capability and realize high efficiency. Driving paralleled operation GaN HEMT needs special care on parameters design of both driving circuit and power device layout, because the low gate-to-source maximum voltage (Vgs) rating and low gate threshold voltage (Vth) raise some strict constrains and challenges. This paper presents the driving challenges in paralleling of GaN devices in an isolated dc-dc converter. The design rules for gate driver and PCB layout are concluded based on the analysis of parasitic. The hardware prototype of a 300W flyback forward isolated converter with paralleling of GaN devices is implemented and presented in this paper.
AB - For current limitation of a single low voltage enhancement mode GaN HEMT, paralleling of GaN HEMT are essential in high current and low voltage applications. Through parallel GaN HEMT, the converter will increase the power handling capability and realize high efficiency. Driving paralleled operation GaN HEMT needs special care on parameters design of both driving circuit and power device layout, because the low gate-to-source maximum voltage (Vgs) rating and low gate threshold voltage (Vth) raise some strict constrains and challenges. This paper presents the driving challenges in paralleling of GaN devices in an isolated dc-dc converter. The design rules for gate driver and PCB layout are concluded based on the analysis of parasitic. The hardware prototype of a 300W flyback forward isolated converter with paralleling of GaN devices is implemented and presented in this paper.
UR - http://www.scopus.com/inward/record.url?scp=85068348123&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85068348123&partnerID=8YFLogxK
U2 - 10.1109/WiPDAAsia.2018.8734540
DO - 10.1109/WiPDAAsia.2018.8734540
M3 - Conference contribution
AN - SCOPUS:85068348123
T3 - 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
SP - 30
EP - 35
BT - 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
PB - Institute of Electrical and Electronics Engineers Inc.
ER -