The Drive Circuit Design for Paralleling Operation of Enhancement GaN HEMT in an Isolated DC-DC converter

Yajing Zhang, Jiuhe Wang, Hong Li, Lijie Wang, Yan Li, Trillion Q. Zheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

For current limitation of a single low voltage enhancement mode GaN HEMT, paralleling of GaN HEMT are essential in high current and low voltage applications. Through parallel GaN HEMT, the converter will increase the power handling capability and realize high efficiency. Driving paralleled operation GaN HEMT needs special care on parameters design of both driving circuit and power device layout, because the low gate-to-source maximum voltage (Vgs) rating and low gate threshold voltage (Vth) raise some strict constrains and challenges. This paper presents the driving challenges in paralleling of GaN devices in an isolated dc-dc converter. The design rules for gate driver and PCB layout are concluded based on the analysis of parasitic. The hardware prototype of a 300W flyback forward isolated converter with paralleling of GaN devices is implemented and presented in this paper.

Original languageEnglish (US)
Title of host publication2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages30-35
Number of pages6
ISBN (Electronic)9781538643921
DOIs
StatePublished - May 1 2018
Event1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 - Xi'an, China
Duration: May 16 2018May 18 2018

Publication series

Name2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018

Conference

Conference1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
CountryChina
CityXi'an
Period5/16/185/18/18

Fingerprint

DC-DC Converter
Circuit Design
DC-DC converters
High electron mobility transistors
Low Voltage
Enhancement
Converter
Networks (circuits)
Layout
Voltage
Electric potential
Design Rules
Parameter Design
High Efficiency
Driver
Polychlorinated Biphenyls
Polychlorinated biphenyls
Threshold voltage
Hardware
Prototype

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Optimization
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Zhang, Y., Wang, J., Li, H., Wang, L., Li, Y., & Zheng, T. Q. (2018). The Drive Circuit Design for Paralleling Operation of Enhancement GaN HEMT in an Isolated DC-DC converter. In 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 (pp. 30-35). [8734540] (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDAAsia.2018.8734540
Zhang, Yajing ; Wang, Jiuhe ; Li, Hong ; Wang, Lijie ; Li, Yan ; Zheng, Trillion Q. / The Drive Circuit Design for Paralleling Operation of Enhancement GaN HEMT in an Isolated DC-DC converter. 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 30-35 (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018).
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abstract = "For current limitation of a single low voltage enhancement mode GaN HEMT, paralleling of GaN HEMT are essential in high current and low voltage applications. Through parallel GaN HEMT, the converter will increase the power handling capability and realize high efficiency. Driving paralleled operation GaN HEMT needs special care on parameters design of both driving circuit and power device layout, because the low gate-to-source maximum voltage (Vgs) rating and low gate threshold voltage (Vth) raise some strict constrains and challenges. This paper presents the driving challenges in paralleling of GaN devices in an isolated dc-dc converter. The design rules for gate driver and PCB layout are concluded based on the analysis of parasitic. The hardware prototype of a 300W flyback forward isolated converter with paralleling of GaN devices is implemented and presented in this paper.",
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Zhang, Y, Wang, J, Li, H, Wang, L, Li, Y & Zheng, TQ 2018, The Drive Circuit Design for Paralleling Operation of Enhancement GaN HEMT in an Isolated DC-DC converter. in 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018., 8734540, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018, Institute of Electrical and Electronics Engineers Inc., pp. 30-35, 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018, Xi'an, China, 5/16/18. https://doi.org/10.1109/WiPDAAsia.2018.8734540

The Drive Circuit Design for Paralleling Operation of Enhancement GaN HEMT in an Isolated DC-DC converter. / Zhang, Yajing; Wang, Jiuhe; Li, Hong; Wang, Lijie; Li, Yan; Zheng, Trillion Q.

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 30-35 8734540 (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Li, Yan

AU - Zheng, Trillion Q.

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N2 - For current limitation of a single low voltage enhancement mode GaN HEMT, paralleling of GaN HEMT are essential in high current and low voltage applications. Through parallel GaN HEMT, the converter will increase the power handling capability and realize high efficiency. Driving paralleled operation GaN HEMT needs special care on parameters design of both driving circuit and power device layout, because the low gate-to-source maximum voltage (Vgs) rating and low gate threshold voltage (Vth) raise some strict constrains and challenges. This paper presents the driving challenges in paralleling of GaN devices in an isolated dc-dc converter. The design rules for gate driver and PCB layout are concluded based on the analysis of parasitic. The hardware prototype of a 300W flyback forward isolated converter with paralleling of GaN devices is implemented and presented in this paper.

AB - For current limitation of a single low voltage enhancement mode GaN HEMT, paralleling of GaN HEMT are essential in high current and low voltage applications. Through parallel GaN HEMT, the converter will increase the power handling capability and realize high efficiency. Driving paralleled operation GaN HEMT needs special care on parameters design of both driving circuit and power device layout, because the low gate-to-source maximum voltage (Vgs) rating and low gate threshold voltage (Vth) raise some strict constrains and challenges. This paper presents the driving challenges in paralleling of GaN devices in an isolated dc-dc converter. The design rules for gate driver and PCB layout are concluded based on the analysis of parasitic. The hardware prototype of a 300W flyback forward isolated converter with paralleling of GaN devices is implemented and presented in this paper.

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Zhang Y, Wang J, Li H, Wang L, Li Y, Zheng TQ. The Drive Circuit Design for Paralleling Operation of Enhancement GaN HEMT in an Isolated DC-DC converter. In 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 30-35. 8734540. (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018). https://doi.org/10.1109/WiPDAAsia.2018.8734540